Lattice matching effect on the luminescent properties of n-ZnSSe on GaAs grown by MOCVD

Enhancement of the Schottky barrier height of Au/ZnSSe diodes

“…ZnS x Se 1Ϫx with xϷ0.07 has proven to be lattice matched to the GaAs substrate and is well suited to optoelectronic integration applications. [5][6][7][8] A Schottky contact can play a key role in making high performance devices. Our previous work 9 on the Schottky contact properties on ZnS x Se 1Ϫx epilayers revealed that Fermi level pinning existed at the metal-ZnSSe interface and hence the obtained Schottky barrier height ͑SBH͒ is lower than that predicted by the conventional Schottky contact theory of ⌽ SB ϭ⌽ M Ϫ, where ⌽ SB , ⌽ M , and are Schottky barrier height, metal work function, and semiconductor electron affinity, respectively.…”