Lattice-matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice-matched metallic compounds to semiconductors

Abstract

New approaches to epitaxy of transition metals and rare earths: Heteroepitaxy on latticematched buffer films on semiconductors (invited) Intrinsic and extrinsic interface states at lattice matched interfaces between III-V compound semiconductors: The InAs/GaSb(110) system J.

The physics and chemistry of the Schottky barrier height

“…96 Furthermore, evidence for inhomogeneous SBH was found for these interfaces. The most spectacular result from these epitaxial metallic compound interfaces is the observation of a dependence of the SBH on epitaxial orientation, observed at the lattice-matched Sc 1-x Er x As/GaAs systems, 97,98 and shown in Fig. 10.…”

Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectricapplications

“…The solubility limit of Sc in GaAs is estimated to be on the order of 10 17 cm À 3 [9], which is similar to that of Er [10,11]. Sc 0.32 Er 0.68 As films have been grown lattice matched on (0 0 1) GaAs [5]. Here, we report the molecular beam epitaxy (MBE) growth and the comparative systematic study of ScAs:In 0.53 Ga 0.47 As and ErAs:In 0.53 Ga 0.47 As nanocomposites in order to illustrate their electrical and thermoelectric properties.…”

“…Among all the rare-earth elements, Sc has the smallest atomic number and Sc mono-pnictides have the smallest lattice parameters [5]. This gives the latter an important role in the engineering of thermoelectric materials, since the incorporation of Sc-containing nanoparticles may cover a unique wavelength range of phonon scattering.…”

Transport and Magnetic Properties of Rare Earth Compounds Epitaxially Grown on Semiconductors

“…The RE-As has been explored first, because of its thermodynamical stability, permitting the use of elevated temperatures for the vacuum deposition, facilitating both, the ordering and the elimination of the As excess [5][6][7]. The substrate materials are, usually, GaAs and InP.…”

“…The matched alloys are ternary and are obtained [6] from the RE-V flanking the two respective substrate materials in Table I. Another method of obtaining lattice-matched heterojunctions consists of using two RE elements with one group V element [7].…”