Lattice locations of silicon atoms in δ-doped layers in GaAs at high doping concentrations

Newman, R. C.; Ashwin, M. J.; Fahy, M.R.; Hart, L.; Holmes, S. N.; Roberts, Christine Cardinal; Zhang, X.; Wagner, J.

doi:10.1103/physrevb.54.8769

Cited by 25 publications

(10 citation statements)

References 56 publications

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“…This is not surprising, since it was pointed out in Ref. 16 that Hall measurements underestimate the carrier density as well as the donor concentration by values up to 2. This effect is enhanced as the period increases, because more electrons are bounded near the dopant spikes and exhibit lower mobilities.…”

Section: Resultsmentioning

confidence: 56%

Time-resolved interband transitions in periodic multilayer δ-doped systems

et al. 1998

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In this work we report a study of radiative interband recombinations in Si periodic multilayer GaAs systems. Photoluminescence and time-resolved photoluminescence measurements were performed, in order to discriminate band-to-band transitions, recombination of quantum confined electrons and photogenerated holes, as well as impurity assisted transitions. Results have been compared with self-consistent calculations, considering radiative recombination with heavy holes. ͓S0163-1829͑98͒02335-2͔ PHYSICAL REVIEW B 15 SEPTEMBER 1998-I VOLUME 58, NUMBER 11 PRB 58 0163-1829/98/58͑11͒/7205͑5͒/$15.00 7205

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Section: Resultsmentioning

confidence: 56%

Time-resolved interband transitions in periodic multilayer δ-doped systems

et al. 1998

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“…Although Si clearly acts as a substitutional acceptor, the presence and properties of acceptor complexes such as Si-X is debated. [53][54][55][56][57][58][59] Our data cannot provide insight at the atomic level, but there are clearly no acceptor sites in a p-type heterostructure's doping layer that act like the deeptrapping DX centers in n-type heterostructures. Regarding Si-X specifically, we can draw two conclusions: If Si-X exists in Al 0.33 Ga 0.67 As in (311)A heterostructures, then it must be a very shallow trap (more than 100 times shallower than DX) if present at high density, and only a deep-trap if it is present at such low density that it cannot 'freeze' the doping layer's charge configuration.…”

Section: Discussionmentioning

confidence: 91%

“…Raman and IR spectroscopy regarding the existence of Si-X in heavily Si-doped (311)A GaAs layers is controversial, with data suggesting that it does 54 and does not 55 exist. Further work, suggested modified structures for Si-X, first as a V Ga -Si As -As Ga complex, 56,57 later ruled out in favor of a perturbed Si Ga -V Ga center. 58,59 These studies were all for GaAs; the existence and properties of Si-X-like complexes in Al 0.33 Ga 0.67 As is unknown.…”

Section: Possible Explanations For This Form Of Hysteresismentioning

confidence: 99%

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

et al. 2012

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Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent 'leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states.

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“…The technological process is widely used, for example, for refinement of parameters of Schottky diodes, 13,14 heterobipolar transistors, 15 and is intensively elaborated (see, for example Refs. [11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Redistribution of Dopant During Overgrowth of a Delta-Layer

Pankratov

2009

NANO

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In this paper, we analyze redistribution of dopant in δ-doped are during overgrowth of the layer. New explanation of asymmetrization of δ-dopant distribution is presented. The explanation was based on model with some inhomogeneous parameters. The inhomogeneities of parameters are native effects of the considered technological process and inhomogeneity of the doped heterostructure. We calculated spatial distribution of Mn concentration in δ-doped area in heterostructure GaAs/InGaAs/GaAs for overlayer GaAs and estimated spreading of the δ-layer as a function of temperature of overgrowth and depth of the overlayer.Keywords: Delta-doping; modeling of dopant redistribution; alternative approach for modeling; decreasing of degradation of delta-layer. 239NANO 2009.04:239-252. Downloaded from www.worldscientific.com by NANYANG TECHNOLOGICAL UNIVERSITY on 08/21/15. For personal use only. 240 E. L. Pankratov NANO 2009.04:239-252. Downloaded from www.worldscientific.com by NANYANG TECHNOLOGICAL UNIVERSITY on 08/21/15. For personal use only. Redistribution of Dopant During Overgrowth of a Delta-Layer 241

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Lattice locations of silicon atoms in δ-doped layers in GaAs at high doping concentrations

Cited by 25 publications

References 56 publications

Time-resolved interband transitions in periodic multilayer δ-doped systems

Time-resolved interband transitions in periodic multilayer δ-doped systems

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Redistribution of Dopant During Overgrowth of a Delta-Layer

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