Lattice locations of indium implanted in diamond

Doyle, B.P.; Dewhurst, J. K.; Lowther, J. E.; Bharuth‐Ram, K.

doi:10.1103/physrevb.57.4965

Cited by 9 publications

(5 citation statements)

References 12 publications

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“…The existence of a substantial substitutional fraction, in both these and previous measurements, is perhaps harder to explain. In the theoretical work [12], substitutional In was found to be at best a metastable state. Ballistic considerations for just slightly above thermal equilibrium near the end of the implantation cascade may lead to this configuration.…”

Section: Resultsmentioning

confidence: 98%

“…The charge state was implied not to affect the In/Cd lattice site. We now consider the vacancy-In-vacancy complex for which calculations were made in previous work [12]. The off-centre substitutional site in that work is a bond-centred site between two vacancies.…”

Section: Resultsmentioning

confidence: 99%

“…The possibility of a significant tetrahedral interstitial site has been ruled out by earlier emission channelling results [11]. Theoretical local density pseudopotential calculations have shown the most stable site to be an interstitial bond-centred position between two adjacent carbon vacancies [12]. The presence of this divacancy stabilized this system.…”

Section: Introductionmentioning

confidence: 98%

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Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling

Doyle

Storbeck

Wahl

et al. 1999

J. Phys.: Condens. Matter

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Channelling has, since its inception, proven to be a valuable tool in locating the geometric position of atoms in the crystal lattice. Allied with powerful theoretical models, it can yield detailed information on the positions that these impurities occupy. 111 In, a radioactive isotope with a conveniently short half-life, is an often-used probe of heavy-atom doping of materials. Previous work has centred on the lattice location of 111 In implanted in type IIa diamond. Theoretical calculations on this `pure' system have also recently been made. We have performed the first studies of 111 In implanted into various carefully selected, defect-rich diamond systems and obtained fractions for the sites occupied. The defect systems investigated include nitrogen in various configurations, boron, hydrogen and vacancies. The use of two-dimensional conversion-electron emission channelling (CEEC) has enabled the system to be studied in greater detail than with conventional one-dimensional CEEC. Coupled with the acquisition of the CEEC spectra for all the major channelling axes, this has yielded a comprehensive data set. The spectra are consistent with a pure substitutional fraction as well as another fraction, approximately 0.45 Åfrom the substitutional along a 111 direction. Previous measurements observed these two components together as substitutional or `near-substitutional'. The data have been compared to simulated CEEC spectra and earlier quantum chemical calculations. The pure substitutional fraction is indicated to be in a defect-free configuration while the component displaced away from substitutional involves most probably the divacancy and another nearby defect. The results show no dependence on impurity type, even after annealing. If indium complexation with these defects does occur it is shown not to measurably affect the channelled spectra and thus the projected lattice location of the 111 In probe. The origin of the random fraction measured in previous studies is proposed to be partially due to In in different multi-vacancy complexes. Taken together, the data indicate the importance of vacancies (complexes) in the final configuration for In after implantation in diamond.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

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Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling

Doyle

Storbeck

Wahl

et al. 1999

J. Phys.: Condens. Matter

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“…Theoretical studies of In implanted diamond also show the formation of the stable V C -In-V C structure with In in the BC site preceded by the formation of two C atoms in interstitial positions. 24 Given the sensitivity of the Mössbauer isomer-shift to the charge density in the immediate vicinity of the probe, our system combining low temperature eMS with annealing studies should allow the tracking of the development of the SnV centers following implantation of Sn probes in diamond and related substrates with potential applications in nanophotonics and quantum communications.…”

Section: Discussionmentioning

confidence: 99%

Annealing studies combined with low temperature emission Mössbauer spectroscopy of short-lived parent isotopes: Determination of local Debye–Waller factors

Gunnlaugsson

Masenda

Mølholt³

et al. 2021

Review of Scientific Instruments

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An extension of the online implantation chamber used for emission Mössbauer Spectroscopy (eMS) at ISOLDE/CERN that allows for quick removal of samples for offline low temperature studies is briefly described. We demonstrate how online eMS data obtained during implantation at temperatures between 300 K and 650 K of short-lived parent isotopes combined with rapid cooling and offline eMS measurements during the decay of the parent isotope can give detailed information on the binding properties of the Mössbauer probe in the lattice. This approach has been applied to study the properties of Sn impurities in ZnO following implantation of 119 In (T ½ = 2.4 min). Sn in the 4+ and 2+ charge states is observed. Above T > 600 K, Sn 2+ is observed and is ascribed to Sn on regular Zn sites, while Sn 2+ detected at T < 600 K is due to Sn in local amorphous regions. A new annealing stage is reported at T ≈ 550 K, characterized by changes in the Sn 4+ emission profile, and is attributed to the annihilation of close Frenkel pairs.

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“…According to computational work [119], indium embedded in diamond prefers a site with a neighboring vacancy and relaxes into a split-vacancy structure. Calculations [117] with the negatively charged split-vacancy InV − indicate a zero phonon line at 584 nm.…”

Section: Inmentioning

confidence: 99%

Impurity atom configurations in diamond and their visibility via scanning transmission electron microscopy imaging

Propst,

Kotakoski,

Åhlgren

2023

Electron. Struct.

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Dispersed impurities in diamond present a flourishing platform for research in quantum informatics, spintronics and single phonon emitters. Based on the vast pool of experimental and theoretical work describing impurity atoms in diamond, we review the configurations by the chemical element discussing the relevant atomic configurations and most important properties. Dopant structures expand from single to co-doping configurations, also combined with carbon vacancies. Despite of their importance, not much is known about the exact atomic configurations associated with the dopant structures beyond computational models, partially due to difficulties in their microscopic observation. To assess the visibility of these structures, we carry out image simulations to show that the heavier dopants may be easily discernible in scanning transmission electron microscopy annular dark field images, with a window of visibility of up to over ± 10 nm in defocus. We further present the first atomic resolution images of an impurity atom configuration (substitutional Er atom) in the diamond lattice, confirmed by a comparison to the simulated images. Overall, our results demonstrate that there is a vast research field waiting for the microscopy community in resolving the exact atomic structure of various impurity atom configurations in diamond.

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Lattice locations of indium implanted in diamond

Cited by 9 publications

References 12 publications

Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling

Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channelling

Annealing studies combined with low temperature emission Mössbauer spectroscopy of short-lived parent isotopes: Determination of local Debye–Waller factors

Impurity atom configurations in diamond and their visibility via scanning transmission electron microscopy imaging

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