Lattice dynamics of Ru 2 FeX (X = Si, Ge) Full Heusler alloys

Rizwan, Muhammad; Afaq, A.; Aneeza, A.

doi:10.1016/j.physb.2018.01.010

Cited by 11 publications

(1 citation statement)

References 20 publications

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“…Reflectivity (R) predicts the bouncing back of radiations from the material surface [18]. The refractive index (n) elaborates on the ratio of the speed of light in a vacuum to the speed of light in a medium [19]. The extinction coefficient (K) denotes light absorption measurement in the given material [6,13,20].…”

Section: Alloymentioning

confidence: 99%

Optoelectronic properties of RuCrX (X = Si, Sn, Ge) Half Heusler alloys: a DFT study

Shah¹,

Almalki

Sagar

et al. 2023

Phys. Scr.

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The reported research investigated the structural, electronic, optical, and thermal properties of optoelectronic Half Heusler Alloys RuCrX (X = Si, Sn, Ge). The characterizations of this Half Heusler Alloys RuCrX (X = Si, Sn, Ge) have been calculated with the Density Functional Theory (DFT) using first-principles calculations with the help of WIEN2K code. Generalized Gradient Approximation (GGA) has been employed as an exchange-correlation function in WIEN2K-Package, which remained helpful for structural optimization. For the observational quality and required properties, FPLAPW- Full Potential Linearized Augmented Plane Wave has been adopted in this study. The calculated lattice constants and band gaps are basic information to select candidate materials favorable for specific optoelectronic applications. The complex dielectric function and elastic properties have been discussed, indicating that the imaginary part of the dielectric functions shows that compounds are optically metallic and become transparent along ductile nature. The assignment of the structures in the optical spectra and band structure transitions are investigated in detail. This study predicts that Heusler Alloys RuCrX (X = Si, Sn, Ge) are suitable for optoelectronic devices.

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