Lattice Dynamics of EuO: Evidence for Giant Spin-Phonon Coupling

Pradip, Ramu; Piekarz, Przemysław; Bosak, A.; Merkel, D. G.; Waller, O.; Seiler, A.; Chumakov, A. I.; Rüffer, R.; Oleś, Andrzej M.; Parliński, K.; Krisch, M.; Baumbach, Tilo; Stankov, S.

doi:10.1103/physrevlett.116.185501

Cited by 28 publications

(20 citation statements)

References 57 publications

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“…The simplicity of their crystal, atomic and electronic structure enable theorists to mathematically calculate and analyze their electronic behavior under diverse conditions. Moreover, these materials are the best in which to experimentally investigate the accuracy of the new mechanisms proposed for the electronic behavior in solid-state physics; e.g., spin-phonon coupling [5][6][7][8], magnetic ordering [9] and insulator-metal transition [10][11]. The role of this family of oxides in the development of 20 th -century physics is such remarkable that it is not an overstatement to claim that the physics owe them greatly for its dazzling progress.…”

Section: Introductionmentioning

confidence: 99%

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

et al. 2019

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Magnetic binary oxides with the rocksalt structure constitute an important class of materials for potential applications as electronic or electrochemical devices. Moreover, they often become a theoretical playground, due to the simple electronic and crystal structures, in the quest for novel phenomena. For these possibilities to be realized, a necessary prerequisite would be to grow atomically ordered and controllably-strained binary oxides on proper substrates. Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence FL, an epitaxial single-phase NiO thin-film growth can be achieved in a wide range of growth temperatures 10 ≤ TG ≤ 750 °C. At the lowest TG, the out-of-plane strain raises to 1.5%, which is five times higher than in NiO film grown at 750 °C. MnO thin films that had long-range order were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by FL and the TG. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low TG = 350 °C prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research.Thin-film deposition is a technique that can be used to control strain in materials [22]. The Curie temperature TC of EuO thin film is strongly dependent on the strain and on film thickness tF [23]. Dislocations in NiO thin films locally change the magnetic ordering from antiferromagnetic to ferromagnetic [24]. Such 'ferromagnetic' dislocations originate from a local non-stoichiometry at in dislocation cores where Ni is deficient. A slight deviation from the stoichiometry also changes the conduction behavior in NiO thin films. Oxygendeficient EuO shows metallic behavior with a substantial increase of the TC to 120 K [25]. The deposition of high-quality magnetic binary oxides, and the ability to control the level of strain and density of defects in their structure, are challenging tasks in materials science and solid-state physics.Pulsed-laser deposition technique (PLD) has many advantages for growing thin films of high-quality oxides [26][27][28][29][30][31]. PLD can preserve the stoichiometry of the film composition,

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Section: Introductionmentioning

confidence: 99%

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

et al. 2019

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“…The importance of the lattice dynamics of lattice-matched interfaces arises from the fact that it is intimately related to physical phenomena such as nanoscale thermal transport [5] and phonon filtering [6], which are fundamentally important for waste heat harvesting [7,8], thermal management in nanoelectronics [9,10], and are the basis for the development of new logic devices operating at THz frequencies [11][12][13]. Furthermore, via electron-phonon [14] and magnon-phonon [15] interactions the lattice dynamics influences many physical properties, thereby offering the opportunity for their manipulation [16].…”

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confidence: 99%

Lattice dynamics of epitaxial strain-free interfaces

et al. 2018

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We report a systematic lattice dynamics study of the technologically important Fe 3 Si/GaAs heterostructure for Fe 3 Si layer thicknesses of 3, 6, 8, and 36 monolayers. The Fe-partial phonon density of states obtained by nuclear inelastic scattering exhibits up to a twofold enhancement of the low-energy phonon states compared to the bulk material for layer thicknesses of 8 monolayers and below. First-principles calculations explain the observed effect by interface-specific phonon states originating from the significantly reduced atomic force constants and allow for achieving a comprehensive understanding of the lattice dynamics of epitaxial strain-free interfaces.

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“…It may also alter the coupling between electrons and atomic vibrations (phonons) and thus influence the spin transport (e.g. spin-flip processes) [7]. Therefore, a full characterization of the interface properties, including the lattice dynamics, becomes a precondition for further developments in this area.…”

Section: Introductionmentioning

confidence: 99%

Ab initio and nuclear inelastic scattering studies of Fe3Si/GaAs heterostructures

et al. 2019

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The structure and dynamical properties of the Fe3Si/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stability of four different atomic configurations of the Fe3Si/GaAs multilayers is analyzed by calculating the formation energies and phonon dispersion curves. The differences in charge density, magnetization, and electronic density of states between the configurations are examined. Our calculations unveil that magnetic moments of the Fe atoms tend to align in a plane parallel to the interface, along the [110] direction of the Fe3Si crystallographic unit cell. In some configurations, the spin polarization of interface layers is larger than that of bulk Fe3Si. The effect of the interface on element-specific and layer-resolved phonon density of states is discussed. The Fe-partial phonon density of states measured for the Fe3Si layer thickness of three monolayers is compared with theoretical results obtained for each interface atomic configuration. The best agreement is found for one of the configurations with a mixed Fe-Si interface layer, which reproduces the anomalous enhancement of the phonon density of states below 10 meV.

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Lattice Dynamics of EuO: Evidence for Giant Spin-Phonon Coupling

Cited by 28 publications

References 57 publications

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Lattice dynamics of epitaxial strain-free interfaces

Ab initio and nuclear inelastic scattering studies of Fe3Si/GaAs heterostructures

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