1991
DOI: 10.1016/0040-6090(91)90034-u
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Lattice distortion in thin films of IVB metal (Ti, Zr, Hr) nitrides

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Cited by 58 publications
(18 citation statements)
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“…Thin films deposited by sputtering have high defects concentration, which causes crystal lattice distortion and promotes the (111) preferred orientation due to deformation energy minimization 20,21 . Grains with (111) orientation grow in the normal direction to the film plane, which contributes to the formation of a columnar microstructure, while (200) grains grow in the parallel direction, having the potential to change the columnar morphology to a non columnar one 22 .…”
Section: Resultsmentioning
confidence: 99%
“…Thin films deposited by sputtering have high defects concentration, which causes crystal lattice distortion and promotes the (111) preferred orientation due to deformation energy minimization 20,21 . Grains with (111) orientation grow in the normal direction to the film plane, which contributes to the formation of a columnar microstructure, while (200) grains grow in the parallel direction, having the potential to change the columnar morphology to a non columnar one 22 .…”
Section: Resultsmentioning
confidence: 99%
“…A c c e p t e d M a n u s c r i p t 7 was observed in CrSiN-2 [10,23]. Both substitutional and interstitial of non-stoichiometric Si atoms in the CrN lattice suggests solid solution of Si in CrN.…”
Section: Page 8 Of 30mentioning
confidence: 91%
“…It is also known that the intake of non-stoichiometric atoms in nitride films of transition metals is grain orientation dependent [23]. It was shown from the TEM diffraction patterns that CrSiN-2 exhibits smaller grains in a more random orientation compared to the sample having a lower Si content (CrSiN-1).…”
Section: Effect Of Si Content On Residual Stress In the Coatingsmentioning
confidence: 93%
“…It means that the nanorod structure is favorable for the growth along the [110] direction. The thermodynamic model is generally used to explain the preferential growth direction of the films [28]. In the thermodynamic model, it has been established that the growth orientation in thin films is obtained at the thermodynamic equilibrium, which will be reached when the total energy -the sum of surface energy and deformation energy -of the system substrate-film has a minimum.…”
Section: Resultsmentioning
confidence: 99%