Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

Lyon, T. J. de; Woodall, J. M.; Goorsky, Mark S.; Kirchner, P. D.

doi:10.1063/1.102608

Cited by 130 publications

(30 citation statements)

References 15 publications

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“…To within experimental error ͑estimated to be Ϯ20% for ͓C͔͒, these results are consistent with approximate equality of p and ͓C͔, i.e., close to full activation of C As donors. This is what is expected, and it agrees with a substantial body of reported work 1,3,8,13,47 for GaAs:C. But if our ͑Hall-derived͒ p values were too low by a factor of 2 ͑as required by r Hall ϭ2.0), this would correspond to a hole concentration that is twice the carbon concentration, which is highly implausible. We therefore conclude that r Hall cannot be 2.0, but is instead much closer to 1.0.…”

Section: Hole Mobility: Infrared Versus Hallsupporting

confidence: 77%

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Songprakob

Zallen²,

Liu³

et al. 2000

Phys. Rev. B

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Infrared reflectivity measurements ͑200-5000 cm Ϫ1 ) and transmittance measurements ͑500-5000 cm Ϫ1 )have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000-3000 cm Ϫ1 region and the onephonon band near 270 cm Ϫ1 rides on a progressively increasing high-reflectivity background. An effectiveplasmon/one-phonon dielectric function with only two free parameters ͑plasma frequency p and damping constant ␥) gives a good description of the main features of both the reflectivity and transmittance spectra. The dependence of p 2 on hole concentration p is linear; at pϭ1.4ϫ10 20 cm Ϫ3 , p is 2150 cm Ϫ1 . At each doping, the damping constant ␥ is large and corresponds to an infrared hole mobility that is about half the Hall mobility. Secondary-ion mass spectroscopy and localized-vibrational-mode measurements indicate that the Hall-derived p is close to the carbon concentration and that the Hall factor is close to unity, so that the Hall mobility provides a good estimate of actual dc mobility. The observed dichotomy between the dc and infrared mobilities is real, not a statistical-averaging artifact. The explanation of the small infrared mobility resides in the influence of intervalence-band absorption on the effective-plasmon damping, which operationally determines that mobility. This is revealed by a comparison of the infrared absorption results to Braunstein's low-p p-GaAs spectra and to a k"p calculation extending Kane's theory to our high dopings. For n-GaAs, which lacks infrared interband absorption, the dc and infrared mobilities do not differ.

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Section: Hole Mobility: Infrared Versus Hallsupporting

confidence: 77%

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Songprakob

Zallen²,

Liu³

et al. 2000

Phys. Rev. B

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“…Sharp epitaxial-layer peaks, the presence of PendellSsung fringes, anda low background level are an indication of the high quality of the layers. The position of the GaAs : C (AlAs : C) peak gives information about the incorporated C concentration [2,7]. This is an essential parameter to determine the effectiveness of the carbon incorporation, since the C concentration incorporated on lattice sites CAs can be smaller than the total C concentration CT, i.e.…”

Section: -Results and Discussionmentioning

confidence: 99%

“…Carbon acts asa p-type dopant in GaAs and AlAs. At the same time, it produces a strong contraction of the lattice [2]. Therefore, we have used carbon to produce highly doped p-type DBRs, which are simultaneously strain-compensated.…”

Section: -Introduetionmentioning

confidence: 99%

X-ray investigation of strain-compensated GaAs: C/AlAs: C distributed Bragg reflectors

et al. 1997

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“…7 Moreover, it was observed that the annealing of highly C-doped GaAs at temperatures between 600 and 850°C leads to a drastic reduction in the hole concentration ͓ p͔. [8][9][10] This cannot be explained by interstitial diffusion, but instead the formation of compensating defects is required. Below ϳ550-600°C or at low carbon concentrations, degradation was not observed: ͓p͔ increased to a level nearly equal to ͓C͔.…”

Section: Introductionmentioning

confidence: 99%

Density-functional calculations of carbon diffusion in GaAs

et al. 1999

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Self-consistent-charge density-functional tight-binding ͑SCC-DFTB͒ calculations have been performed to survey the potential-energy surface for a single interstitial carbon atom introduced into GaAs. The results provided a possible model for the diffusion of carbon through GaAs with an activation energy of less than 1 eV. The carbon atom moves via split-interstitial and bond-centered configurations. Subsequently, the energetics of the model reaction were refined using a fully self-consistent density-functional method, AIMPRO. These calculations were found to be in good agreement with the more approximate SCC-DFTB results. Experimental studies have also found an activation energy of ϳ1 eV for carbon migration in heavily doped material. ͓S0163-1829͑99͒02246-8͔

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Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

Cited by 130 publications

References 15 publications

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

X-ray investigation of strain-compensated GaAs: C/AlAs: C distributed Bragg reflectors

Density-functional calculations of carbon diffusion in GaAs

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