2007
DOI: 10.1063/1.2822813
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Lattice contraction and magnetic and electronic transport properties of Mn3Zn1−xGexN

Abstract: The lattice and electronic and magnetic transport properties of the antiperovskite structure Mn3Zn1−xGexN compounds were investigated. For Mn3ZnN, there is a magnetic transition from antiferromagnetic to paramagnetic near 185K. Correspondingly, the resistivity shows an abrupt drop, but any sudden change of lattice parameters is not found. However, it is interesting that the partial substitution of Ge for Zn induces a lattice contraction near the magnetic transition temperature, where a drop of the resistivity … Show more

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Cited by 134 publications
(81 citation statements)
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“…[6][7][8][9][10] In addition to the Invar effect in Fe-Ni alloys, [ 11 ] ZTE in a single material has, to date, only been documented in a small number of compounds such as YbGaGe, [ 2 ] Mn 3 AN (A = Cu/Sn, Zn/Sn), [ 12 ] Fe[Co(CN) 6 ], [ 13 ] and N(CH 3 ) 4 CuZn(CN) 4 . [ 14 ] Among the candidates for ZTE materials, the antiperovskite manganese nitrides are prominent, due to their special spectrum of properties including ZTE isotropy, [ 12 ] electric conductivity, [ 15 ] and good mechanical performance. [ 16 ] However, the antiperovskite manganese nitrides show relatively narrow ZTE temperature ranges, generally less than 80 K. [ 12 ] It has been attempted in the past to infl uence the NTE or ZTE temperature range of antiperovskite manganese nitrides by adding various alloying elements, [ 8 , 12 ] which mostly led to a shift in the (still limited) temperature range.…”
Section: Doi: 101002/adma201102552mentioning
confidence: 99%
“…[6][7][8][9][10] In addition to the Invar effect in Fe-Ni alloys, [ 11 ] ZTE in a single material has, to date, only been documented in a small number of compounds such as YbGaGe, [ 2 ] Mn 3 AN (A = Cu/Sn, Zn/Sn), [ 12 ] Fe[Co(CN) 6 ], [ 13 ] and N(CH 3 ) 4 CuZn(CN) 4 . [ 14 ] Among the candidates for ZTE materials, the antiperovskite manganese nitrides are prominent, due to their special spectrum of properties including ZTE isotropy, [ 12 ] electric conductivity, [ 15 ] and good mechanical performance. [ 16 ] However, the antiperovskite manganese nitrides show relatively narrow ZTE temperature ranges, generally less than 80 K. [ 12 ] It has been attempted in the past to infl uence the NTE or ZTE temperature range of antiperovskite manganese nitrides by adding various alloying elements, [ 8 , 12 ] which mostly led to a shift in the (still limited) temperature range.…”
Section: Doi: 101002/adma201102552mentioning
confidence: 99%
“…Many materials and mechanisms for NTE have been found and established, for example, phase transition in PbTiO 3 [4], charge-transfer between metallic atoms in BiNiO 3 [5], magnetostrictive effects in antiperovskite manganese nitrides [6,7], and the ''transverse thermal motion'' mechanism in a large variety of framework materials, such as oxides [8], cyanides [9] and fluorides [10]. In many cases, the ''transverse thermal motion'' involves the coupled rotation of more or less rigid coordination-polyhedron; this is the easily accepted and visualized rigid unit mode (RUM) model.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, researchers found that the kind of compounds show a wide variety of interesting physical phenomena such as superconductivity [2,3], negative thermal expansion [4][5][6][7][8], large magnetocaloric effect [9,10], giant magnetoresistance [11], a nearly zero temperature coefficient of resistivity [12] and magnetostriction [13]. These properties are closely correlated with their structure and magnetic phase transition.…”
Section: Introductionmentioning
confidence: 99%