Lattice constant variation in GaN:Si layers grown by HVPE

Usikov, A.; Kovalenkov, O. V.; Mastro, M. M.; Tsvetkov, D.; Pechnikov, A. I.; Soukhoveev, V.; Shapovalova, Yelena; Gainer, G. H.

doi:10.1557/proc-743-l3.41

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…Si doping is known to improve crystalline quality of GaN‐based layers by decreasing of compressive stress usually observed in the GaN layers grown on sapphire and even by changing the stress from compressive to tensile . In addition, Si is a shallow donor in n‐GaN and high Si doping creates a large host of positively ionized donors Si + at the surface associated with the space charge region that has an electrical field and attracts more negative OH‐ ions in the KOH aqueous solution.…”

Section: Resultsmentioning

confidence: 99%

Investigation of water splitting using III‐N structures

Usikov

Ermakov

Helava

et al. 2017

Physica Status Solidi (b)

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Specifics of the water photoelectrolysis in KOH‐base aqueous solution using GaN‐based structures as working electrodes are studied. The structures were grown by HVPE and MOCVD techniques on sapphire substrates. In highly Si‐doped HVPE‐grown GaN layers (ND−NA ∼ 3 × 1018 cm−3) a barrier at the E1 offset potential dominates the current–potential (I–E) characteristics. The same dominant E1 offset potential was observed in MOCVD‐grown GaN/InGaN nanopillar structures after the treatment. The Debye screening effect in high‐concentration of KOH electrolyte (20–40 wt.%) that reduces the potential barrier was observed clearly in the defectless nanopillar structures. The corrosion process is initiated in the top p‐type layers via channels associated with threading defects and can penetrate deeply into the structure. It further proceeds in a lateral direction in n‐type layers forming voids and cavities in the structure. The H2 production rate of 0.3–0.6 ml cm−2 h−1 was measured for n‐GaN‐based structure in KOH electrolyte under the Xe‐lamp illumination (concentration factor ×15).

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Section: Resultsmentioning

confidence: 99%

Investigation of water splitting using III‐N structures

Usikov

Ermakov

Helava

et al. 2017

Physica Status Solidi (b)

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“…Although the value of the offset potential E3 of 0.67 V for InGaN/GaN (sample D) is higher than the offset potential E2 for GaN layers, the carrier leakage and defective regions at the InGaN sample surface cannot be ruled out. Doping of GaN layers with Si may result in improved crystalline quality due to lower threading dislocation densities, decreased compressive stress (or lattice parameters), and even reversal of stress from compressive to tensile [5,6].…”

Section: Resultsmentioning

confidence: 99%

Investigation of Direct Water Photoelectrolysis Process Using III-N Structures

Usikov

Nikiforov

Khait³

et al. 2017

MSF

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GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H2 production rate of 0.3-0.6 ml/cm2×h was measured for n-GaN structure.

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“…( 13), a reduction of TDD is necessary to avoid the generation of tensile strain. [94] High-quality facet controlled epitaxial lateral overgrown (FACELO) substrate was reported to be effective in reducing the dislocation density of GaN, and could be used to relieve the tensile stress in Si-doped GaN. [84]…”

Section: Stress State In Si-doped Ganmentioning

confidence: 99%

Growth and doping of bulk GaN by hydride vapor phase epitaxy*

Wang

Cai²,

Ren

et al. 2020

Chinese Phys. B

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Doping is essential in the growth of bulk GaN substrates, which could help control the electrical properties to meet the requirements of various types of GaN-based devices. The progresses in the growth of undoped, Si-doped, Ge-doped, Fe-doped, and highly pure GaN by hydride vapor phase epitaxy (HVPE) are reviewed in this article. The growth technology and precursors of each type of doping are introduced. Besides, the influence of doping on the optical and electrical properties of GaN are presented in detail. Furthermore, the problems caused by doping, as well as the methods to solve them are also discussed. At last, highly pure GaN is briefly introduced, which points out a new way to realize high-purity semi-insulating (HPSI) GaN.

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Lattice constant variation in GaN:Si layers grown by HVPE

Cited by 5 publications

References 5 publications

Investigation of water splitting using III‐N structures

Investigation of water splitting using III‐N structures

Investigation of Direct Water Photoelectrolysis Process Using III-N Structures

Growth and doping of bulk GaN by hydride vapor phase epitaxy*

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