Lattice buffer effect of Ti film on the epitaxial growth of Ag nanotwins on Si substrates with various orientations

Chuang, Tung‐Han; Wu, Po‐Ching; Lin, Yu-Cheng

doi:10.1016/j.matchar.2020.110509

Cited by 18 publications

(2 citation statements)

References 22 publications

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“…They sputtered nanotwinned Ag films on Si chips with (100), (110) and (111) orientations pre-coated with Ti thin films and reported that the resulting Ag films had a high density of (111) textured nanotwins with twin spacing of 2 to 50 nm. The cross-sectional FIB micrographs showed that the thickness of the transition layers with conventional random grains that formed at the bottom of Ag films deposited on various orientations of Si chips had a sequence of Si (100) < Si (111) < Si (110) [10].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of the Evaporation of Ag Nano-Twinned Films on Si Wafers with Assistance of Ion Beam Bombardment

Chuang¹,

Chen²,

Wu³

2022

IJMMME

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Ag nanotwinned thin film with a thickness of about 4 μm has been evaporated on an 8-inch Si wafer with the assistance of ion beam bombardment. FIB cross-sectional imaging revealed many columnar grains with an average width of about 0.5 μm containing numerous parallel Ag nanotwins. The XRD spectrum showed a strong Ag ( 111) peak without any other crystal orientations both in the central and edge regions, indicating the (111) preferred orientation of the Ag nanotwinned films. The results were consistent with top-view EBSD inverse pole figure analysis showing a very high density of the (111) orientation, 85.2±1.9%, on the surface of the Si wafer. A modified stress relaxation model is proposed to explain the enhancement of the formation of a high density of nanotwins in the Ag films evaporated with simultaneous ion bombardment.

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Section: Introductionmentioning

confidence: 99%

Mechanism of the Evaporation of Ag Nano-Twinned Films on Si Wafers with Assistance of Ion Beam Bombardment

Chuang¹,

Chen²,

Wu³

2022

IJMMME

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“…Ag nanotwinned films have also been fabricated on Si substrates by magnetron sputtering method (Chuang et al, 2020;. Those studies showed that the resulting Ag films had a high density of (111)-textured nanotwins with spacing of 2 to 50 nm.…”

mentioning

confidence: 99%

Low-Temperature Direct Bonding of 3D-IC Packages and Power IC Modules Using Ag Nanotwinned Thin Films

Chuang

Lai

et al. 2022

International Journal of Manufacturing, Materials, and Mechanical Engineering

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Ag has the lowest stacking fault energy of all metals, which allows twin formation to occur more easily. The (111)-preferred orientation Ag nanotwinned films is fabricated by either sputtering or evaporation method exhibit columnar Ag grains grown vertically on Si substrates. Ag nanotwinned films have a (111)-preferred orientation with a density about 98% and diffusivity that is 2 to 5 orders of magnitude higher than those of (100) and (110) surfaces. Low temperature direct bonding with (111)-oriented Ag nanotwins films is proposed to fulfil the requirements for wafer-on-wafer (WoW), chip-on-wafer (CoW), and chip-on-wafer-on-substrate (CoWoS) advanced 3D-IC packaging, with the process temperature drastically reduced to 100°C. Such an innovative bonding method also provides a promising solution for die attachment of Si chips with DBC-ceramic substrates for power module packaging.

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Sputtering of Ag (111) nanotwinned films on Si (100) wafers for backside metallization of power devices

Lai

Lee

et al. 2021

J Mater Sci: Mater Electron

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Lattice buffer effect of Ti film on the epitaxial growth of Ag nanotwins on Si substrates with various orientations

Cited by 18 publications

References 22 publications

Mechanism of the Evaporation of Ag Nano-Twinned Films on Si Wafers with Assistance of Ion Beam Bombardment

Mechanism of the Evaporation of Ag Nano-Twinned Films on Si Wafers with Assistance of Ion Beam Bombardment

Low-Temperature Direct Bonding of 3D-IC Packages and Power IC Modules Using Ag Nanotwinned Thin Films

Sputtering of Ag (111) nanotwinned films on Si (100) wafers for backside metallization of power devices

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