Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM

Jnawali, Giriraj; Hattab, H.; Krenzer, B.; Hoegen, M. Horn von

doi:10.1103/physrevb.74.195340

Cited by 43 publications

(39 citation statements)

References 24 publications

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“…13a Si(001) = 11a Bi(111) . Along the perpendicular (110) direction, the row distance of the Bi(111) interface a Bi(111) sin(60°) = 3.93 Å almost matches the Si surface lattice constant of a Si(001) = 3.84 Å [22]. As discussed above, the remaining compressive strain of 2.3% is finally accommodated by the array of interfacial misfit dislocations.…”

Section: Resultsmentioning

confidence: 70%

“…Annealing up to 450 K (annealing rate = 10 K/min) results in the generation of an ordered array of misfit dislocations at the interface accommodating the lattice mismatch of 2.3% between Si(001) and Bi(111) [22]. The strain fields of the periodic dislocation array causes a splitting of each LEED spot into series of satellites which is addressed in detail elsewhere [24,25].…”

Section: Resultsmentioning

confidence: 99%

“…The evaporation rate (0.28 nm/min) was monitored in situ by a quartz microbalance. The film thickness was calibrated using the intensity oscillations of the (00)-spot during the deposition at 150 K [22] which occur in a bilayer-by-bilayer mode [14]. Additionally the total coverage of the film was also measured by ex situ AFM.…”

Section: Methodsmentioning

confidence: 99%

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Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure

et al. 2008

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Section: Resultsmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 99%

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Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure

et al. 2008

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“…The slight undulation in the topography originates from overgrown substrate terraces, due to a miscut of %1 of the Si(100) wafer. In spite of the different types of symmetry, threefold for the Bi(111) and twofold for Sið100Þ-ð2 Â 1Þ, both lattices can be matched commensurably [20,25]. Individual domains can grow over several substrate steps without being affected [16].…”

mentioning

confidence: 99%

“…An amount of 3-5 nm of Bi, corresponding to 8-13 Bi bilayer, was deposited at a rate of about 0:15 nm= min onto the cooled sample surface (T sample ¼ 130 K). The samples were moderately annealed to room temperature, resulting in epitaxial Bi(111) films [20], as was checked by low energy electron diffraction (LEED).…”

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Conservation of the Lateral Electron Momentum at a Metal-Semiconductor Interface Studied by Ballistic Electron Emission Microscopy

Bobisch

Bannani²,

Koroteev³

et al. 2009

Phys. Rev. Lett.

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We report on ballistic electron emission microscopy and spectroscopy studies on epitaxial (3-5 nm thick) Bi(111) films, grown on n-type Si substrates. The effective barrier heights of the Schottky barrier observed are 0.58 eV for the Bi=Sið100Þ-ð2 Â 1Þ and 0.68 eV for the Bi=Sið111Þ-ð7 Â 7Þ. At the step edges of the epitaxial films a strong increase of the ballistic electron emission microscopy current is observed for Bi=Sið111Þ-ð7 Â 7Þ, while no increase occurs for Bi=Sið100Þ-ð2 Â 1Þ. These observations can be explained by the conservation of the lateral momentum of the electron at the metal-semiconductor interface. DOI: 10.1103/PhysRevLett.102.136807 PACS numbers: 73.23.Ad, 73.20.At, 73.30.+y, 73.40.Àc Since the invention of ballistic electron emission microscopy (BEEM) by Bell and Kaiser two decades ago [1,2], studies on the conservation of lateral electron momentum at the interface formed between metals and semiconductors have remained puzzling. Schowalter and Lee [3,4] studied ballistic electron emission spectroscopy (BEES) for Au films grown on Si substrates with different crystallographic orientations. Assuming that the lateral electron momentum at the metal-semiconductor interface is conserved [2] the BEEM currents were expected to differ dramatically due to different projections of the conduction band minima of the Si on the (111) and (100) plane. However, almost identical BEEM currents were measured. These results were later confirmed by Weilmeier et al. [5,6]. In the case of Pd on Si, Ludeke and Bauer [7] attributed the observed equality of transmission across (111) and (100) to interface scattering randomizing the electron momentum. As discussed by García-Vidal et al.[8] and Bell [9], the results found on Au samples may be explained without additional electronic scattering processes, because the electronic band structure of the transition metals (Au, Ag, Pd, etc.) exhibits a band gap in the [111] direction, requiring a minimal lateral component of the electronic momentum. Taking into account the matching conditions at the metal-semiconductor interface, they predicted a similar onset for the BEEM current, but a higher intensity for Au=Sið111Þ in agreement with the experiments.A different situation is found with CoSi 2 =Sið100Þ versus CoSi 2 =Sið111Þ. The band structure of CoSi 2 allows the propagation of electrons at k k ¼ 0, and due to the excellent quality of the epitaxial layers there is very little diffuse scattering of electrons. The latter is confirmed by the high resolution of detail at the metal-semiconductor interface obtained by BEEM imaging [10], indicating that the electrons are limited to a very small cone within the CoSi 2 . A theoretical description by García-Vidal et al. [8,[11][12][13][14] could explain the high spatial resolution for BEEM and has predicted that the onset for the BEEM current should be shifted for the (111) versus the (100) substrate, due to the conservation of the lateral momentum at the interface. However, the experimental results for the BEEM current are contra...

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Electron-Phonon Energy Transfer in Bismuth Observed by Ultrafast Electron Diffraction

Rajković

Ligges

Zhou

et al. 2006

Springer Series in Chemical Physics

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Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM

Cited by 43 publications

References 24 publications

Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure

Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure

Conservation of the Lateral Electron Momentum at a Metal-Semiconductor Interface Studied by Ballistic Electron Emission Microscopy

Electron-Phonon Energy Transfer in Bismuth Observed by Ultrafast Electron Diffraction

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