Lattice Absorption in Gallium Arsenide

Cochran, William G.; Fray, Sebastian; Johnson, Frederic A.; Quarrington, J E; Williams, Neil

doi:10.1063/1.1777024

Cited by 134 publications

(19 citation statements)

References 9 publications

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“…I n Table 3 the frequencies of all reported features in the two-phonon absorption spectrum [8,9], the second-order Raman spectrum [lo], and the self-energy function of the zone-centre transverse optic phonon [l J are listed. I n the list of bands attributed t.0 Cochran et al [8] we have also included, in brackets, the frequencies of two weak features present in their spectra but not listed in their table. Both of these features correlate well with later observations, as can be seen from Table 3.…”

Section: Resultsmentioning

confidence: 99%

Phonon Frequencies in GaAs

Patel

Parker

Jamshidi

et al. 1984

Physica Status Solidi (b)

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The eleven-parameter rigid-ion model is used to describe the lattice dynamics of GaAs. The model gives a satisfactory description of reported neutron scattering data throughout most of the Brillouin zone, and critical point phonon frequencies Calculated with the model are shown t o provide a satisfactory basis for the assignment of nearly all features in the reported two-phonon infrared spectrum and second-order Raman spectrum of GaAs.Ein elfparametriges Modell starrer Ionen wird zur Beschreibung der Gitterdynamik von GaAs benutzt. Das Modell liefert eine befriedigende Beschreibung von veroffentlichten Neutronenstreuwerten uber fast die gesamte Brillouinzone, und es wird gezeigt, dab die mit dem Modell berechneten Phononenfrequenzen der kritischen Punkte eine befriedigende Basis fur die Zuordnung von fast allen Einzelheiten der veroffentlichten Zwei-Phononen-Infrarotspektren und der Ramanspektren zweiter Ordnung fur GaAs liefern.

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Section: Resultsmentioning

confidence: 99%

Phonon Frequencies in GaAs

Patel

Parker

Jamshidi

et al. 1984

Physica Status Solidi (b)

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“…26 This is a consequence of the substrate's transparency above 560 cm Ϫ1 , which allows a contribution to the observed reflectivity from light returning from the substrate's back surface.…”

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confidence: 99%

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Songprakob

Zallen²,

Liu³

et al. 2000

Phys. Rev. B

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Infrared reflectivity measurements ͑200-5000 cm Ϫ1 ) and transmittance measurements ͑500-5000 cm Ϫ1 )have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000-3000 cm Ϫ1 region and the onephonon band near 270 cm Ϫ1 rides on a progressively increasing high-reflectivity background. An effectiveplasmon/one-phonon dielectric function with only two free parameters ͑plasma frequency p and damping constant ␥) gives a good description of the main features of both the reflectivity and transmittance spectra. The dependence of p 2 on hole concentration p is linear; at pϭ1.4ϫ10 20 cm Ϫ3 , p is 2150 cm Ϫ1 . At each doping, the damping constant ␥ is large and corresponds to an infrared hole mobility that is about half the Hall mobility. Secondary-ion mass spectroscopy and localized-vibrational-mode measurements indicate that the Hall-derived p is close to the carbon concentration and that the Hall factor is close to unity, so that the Hall mobility provides a good estimate of actual dc mobility. The observed dichotomy between the dc and infrared mobilities is real, not a statistical-averaging artifact. The explanation of the small infrared mobility resides in the influence of intervalence-band absorption on the effective-plasmon damping, which operationally determines that mobility. This is revealed by a comparison of the infrared absorption results to Braunstein's low-p p-GaAs spectra and to a k"p calculation extending Kane's theory to our high dopings. For n-GaAs, which lacks infrared interband absorption, the dc and infrared mobilities do not differ.

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“…3(a) is due to a sharp change in the tabulated optical constants at this point. Above 12.5 μm, the absorption for GaAs increases dramatically due to multiple phonon interactions [43].…”

Section: Spectral Emissivitymentioning

confidence: 99%

Solar heating of GaAs nanowire solar cells

Wu¹,

Povinelli²

2015

Opt. Express

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We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

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Lattice Absorption in Gallium Arsenide

Cited by 134 publications

References 9 publications

Phonon Frequencies in GaAs

Phonon Frequencies in GaAs

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Solar heating of GaAs nanowire solar cells

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