2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS) 2017
DOI: 10.1109/memsys.2017.7863571
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Laterally vibrating lithium niobate MEMS resonators with 30% electromechanical coupling coefficient

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Cited by 37 publications
(12 citation statements)
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“…It is a crystalline material and resonators must be fabricated via subtractive processes, posing some fabrication challenges. It has been used for both bulk and MEMS scale resonators [31], [35], [26], [27]. The lower dielectric constant of the material can be offset by operation at higher frequencies, which is now more practical due to advancements in widebandgap semiconductors.…”
Section: Resonator Design and Fabrication A Materials And Resonanmentioning
confidence: 99%
“…It is a crystalline material and resonators must be fabricated via subtractive processes, posing some fabrication challenges. It has been used for both bulk and MEMS scale resonators [31], [35], [26], [27]. The lower dielectric constant of the material can be offset by operation at higher frequencies, which is now more practical due to advancements in widebandgap semiconductors.…”
Section: Resonator Design and Fabrication A Materials And Resonanmentioning
confidence: 99%
“…The BVD circuit elements fully parameterize the frequency (ω m = 1/ √ LC), piezoelectric coupling (k 2 = π 2 C/8C g ), and quality factor (Q = π 2 /8 ω m C R ). 29 Intriguingly, we find that while the quality factor of the resonators contributes to insertion loss in the passband as well as less sharply defined band edges, it is not a strong limiting factor in filter performance (Fig. 4b).…”
mentioning
confidence: 70%
“…Thin-film LiNbO 3 has recently gained prominence in the realm of classical radio-frequency systems [18][19][20]. Here, device fabrication is performed on a 500-nm film of X-cut LiNbO 3 on a 500-μm high-resistivity (> 3 kΩ · cm) Si substrate and involves seven masks of lithography consisting of the following four stages [see Fig.…”
Section: Device Design and Fabricationmentioning
confidence: 99%
“…The gate electrodes used to address the phononic defect sites are patterned with a separate e-beam mask and normal-incidence Al evaporation, and finally, a bandage process [23] is used to ensure lossless superconducting connections between all metalization layers. As a final step, we release the structures with a masked XeF 2 dry etch that etches the underlying Si with extremely high selectivity to the LiNbO 3 and the Al [19,20], leaving all aluminum layers intact at the end of the process.…”
Section: Device Design and Fabricationmentioning
confidence: 99%