Laterally‐coupled distributed feedback laser with first‐order gratings by interference lithography

Li, Jingsi; Cheng, Julian

doi:10.1049/el.2013.1520

Cited by 7 publications

(8 citation statements)

References 6 publications

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“…shows the lasing wavelengths of the EACC DFB laser under different bias currents and temperatures. It can be seen that the lasing wavelength will have a red shift of about 12 pm/mA, which agrees well with the values previously reported for phase-shifted DFB lasers [9], this rate is lower than that of DFB lasers without a quarter-wave phase-shift (typically > 30 pm=mA [19]), thus the lasing mode of EACC DFB lasers with a %-EPS is more stable than the DFB lasers without phase-shift [22]. The wavelength shift with the current increasing is mainly caused by the bias current induced refractive index change and/or is caused by the instability of the lasing mode, and the wavelength red shift ratio with temperature is about 0.1 nm/ C.…”

Section: Fabrication and Experimental Resultssupporting

confidence: 90%

An Equivalent-Asymmetric Coupling Coefficient DFB Laser With High Output Efficiency and Stable Single Longitudinal Mode Operation

et al. 2014

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An equivalent-asymmetric coupling coefficient (EACC) distributed feedback laser (DFB) semiconductor laser with equivalent-half apodization grating (EHAG) structure is proposed and experimentally demonstrated for the first time; the EHAG profile is equivalently realized by linearly changing the duty cycle of a sampled Bragg grating along the one half cavity, while that of the other half cavity is kept uniform. Compared with the equivalent-symmetric coupling coefficient DFB laser, the simulated intensity distribution of the EACC DFB laser shows that the light power is concentrated not only on near the phase-shift region and that the power at the front end is enlarged. Therefore, the longitudinal spatial hole burning may be reduced; the output efficiency and the singlemode stability may be improved. The experimental results show that the output power ratio between the front and rear facets is about 2.17 and the side-mode suppression ratios are over 50 dB when the injection current is in the range from 60 to 200 mA.

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Section: Fabrication and Experimental Resultssupporting

confidence: 90%

An Equivalent-Asymmetric Coupling Coefficient DFB Laser With High Output Efficiency and Stable Single Longitudinal Mode Operation

et al. 2014

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“…To avoid the re-growth process, Goshima et al proposed a QD-based laterally coupled distributed feedback (LC-DFB) laser structure which was realized by deeply etching the grating vertically into the ridge waveguide, but low slope efficiencies below 0.03 W/A and small side-mode suppression ratio (SMSR) of 20 dB were observed due to large waveguide losses [ 10 ]. The waveguide losses are mainly from the deep etching process, by which the high-quality and uniform grating structure is very difficult to realize due to the technical issues of high aspect ratio (normally 20:1) requirement in either dry etching or wet etching process [ 11 ]. So, in order to realize a super high-performance DFB laser, it is necessary to trace a way to combine the optimized QD active region with improved device waveguide structure together.…”

Section: Introductionmentioning

confidence: 99%

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

Huang

Ning

et al. 2018

Nanoscale Res Lett

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In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser. With this superior performance of the DFB laser, the wide tunable dual-wavelength lasing operation has been obtained by delicately defining different periods for the grating structures on the two sides of the laser ridge or combining the reduced laser cavity length. The wavelength spacing between the two lasing modes can be flexibly tuned in a very wide range from 0.5 to 73.4 nm, corresponding to the frequency difference from 0.10 to 14 THz, which is the largest tuning range by the utilization of single device and hence providing a new opportunity towards the generation of CW THz radiation.

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“…[22][23][24][25] In additional recent work, improvements in low-loss, high-power operation have been achieved by etched lateral grating fabrication, 13 or by use of a twostep ridge etch process for minimal lateral current spreading. 26 On the other hand, higher side mode discrimination in relatively short cavities has been achieved by operation with a narrower ridge waveguide of 1.7 lm width, 27 introducing first-order 28,29 or optimized third-order [30][31][32][33][34] Bragg gratings on the ridge waveguide sidewalls, or by use of focused ion beam lithography (FIB) in LC-DFB 35 and LC-DBR 36,37 configurations. Notably, chirped CRW gratings for the better control over the coupling coefficient have been also investigated.…”

Section: Introductionmentioning

confidence: 99%

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Papatryfonos

Saladukha

Merghem

et al. 2017

Journal of Applied Physics

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Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers

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Laterally‐coupled distributed feedback laser with first‐order gratings by interference lithography

Cited by 7 publications

References 6 publications

An Equivalent-Asymmetric Coupling Coefficient DFB Laser With High Output Efficiency and Stable Single Longitudinal Mode Operation

An Equivalent-Asymmetric Coupling Coefficient DFB Laser With High Output Efficiency and Stable Single Longitudinal Mode Operation

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

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