Lateral Variation-Doped Insulated Gate Bipolar Transistor for Low On-State Voltage With Low Loss

Vaidya, Mahesh; Naugarhiya, Alok; Verma, Shrish; Mishra, Guru Prasad

doi:10.1109/led.2020.2986941

Cited by 7 publications

(4 citation statements)

References 19 publications

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“…9 The major physics-based models CONMOB, FLDMOB, BGN, ANALYTIC, etc are used of Silvaco's ATLAS for the simulation purpose, which was also used in. 12 The comparison between the Experimental data and the validated data is shown in Fig. 6.…”

Section: Experimental Calibration With Results and Discussionmentioning

confidence: 99%

“…However, to improve the trade-off between E off and V on with increment in breakdown voltage, few drift engineering techniques have also been applied in IGBT. [10][11][12][13][14] The controllable trench gate (CTG) at the collector side is implemented to control the minority carrier injection with the nature of applied potential difference between CTG and collector terminal. This technique reduces the E off and V on by 34% and 74%, respectively.…”

mentioning

confidence: 99%

“…On the other hand, p-col section at the collector side provides the fast discharging path and offers 33% reduction in the E off . 12 Furthermore, the vertical variation in the drift region shows the better current handling ability by increasing the average doping concentration. The structural modification reduces the Q GC and offers 40% reduction in turn-off time in order to provide low loss IGBT.…”

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confidence: 99%

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1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2022

ECS J. Solid State Sci. Technol.

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A gate engineering technique was used in an insulated gate bipolar transistor (IGBT) for fast switching applications. The modification consists of stepped oxide pattern at gate terminal with n-poly layer sandwiched between two p-poly layers. The oxide thickness increases from top to bottom to create a stepped structure. The oxide is thinner on the channel side and thicker on the collector side. The thinner oxide on the channel side increases gate to emitter charges (QGE) by extracting extra charges along the channel. The presence of these extra charges also increases the collector current density resulting in a reduction in the area specific on-resistance (Ron.A). Furthermore, to elongate the impact of QGC reduction, the low doped p-col region has been facilitated which also play an important role to increase the breakdown voltage by reducing corner electric field. This p-col region creates a charge extraction path to sweep out charges from the drift region during a turn-off event, leading to rapid turn-off. The collective improvement in QGE and QGC provides fast switching to the proposed device by improving turn-off time by 63% and reduces turn-off loss (Eoff) by 55% as compared to the conventional device

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Section: Experimental Calibration With Results and Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

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1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2022

ECS J. Solid State Sci. Technol.

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“…Furthermore, the stepped doped collector trench IGBT presented in [8] showed significant improvement in the turn-off energy loss but had a low current handling ability. The lateral variation in doping in the drift region proposed by Vaidya et al forms a Darlington pair in the drift region and increases the current handling ability, which reduces the drop in V on [9]. The concept of variation in the drift region with unequal doping was presented by Gupta et al [10].…”

Section: Introductionmentioning

confidence: 99%

A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2021

Semicond. Sci. Technol.

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The performance of a superjunction trench-insulated gate bipolar transistor with variable vertical doping in the epitaxial region along with variation in the collector layer is investigated. The concept of vertical variation transfers the avalanche multiplication point from the epitaxial edges to the middle of the pillar. The proposed device offers increased effective doping in the drift region, which reduces the on-state voltage (V on ) without any degradation in the breakdown voltage. Furthermore, the horizontal doping variation in the collector layer supports the phenomenon in two ways: the left section of the collector layer reduces V on whereas the right portion enables an efficient discharging path, which allows improved switching performance. In addition to this, a reduction in the gate to collector charge (Q GC ) is observed because of the presence of a lightly doped n-region below the gate terminal. A two-dimensional numerical simulation revealed that the proposed device offers a 15.30% reduction in Q GC compared with the conventional device. The structural modification offers a 40% reduction in turn-off time, resulting in a reduction in turn-off energy loss (E off ).

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Low Loss Enabled Semi-superjunction 4H-SiC IGBT for High Voltage and Current Application

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2022

Communications in Computer and Information Science

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Lateral Variation-Doped Insulated Gate Bipolar Transistor for Low On-State Voltage With Low Loss

Cited by 7 publications

References 19 publications

1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage

Low Loss Enabled Semi-superjunction 4H-SiC IGBT for High Voltage and Current Application

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