2005
DOI: 10.1116/1.1897711
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Lateral templating of self-organized ripple morphologies during focused ion beam milling of Ge

Abstract: Articles you may be interested inThe role of asymmetric excitation in self-organized nanostructure formation upon femtosecond laser ablation AIP Conf. Proc. 1464, 428 (2012); 10.1063/1.4739897 Patterning polycrystalline thin films by defocused ion beam: The influence of initial morphology on the evolution of self-organized nanostructures J. Appl. Phys.

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Cited by 25 publications
(20 citation statements)
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(2 reference statements)
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“…Recently, Datta, Wu, and Wang used focused ion-beam microscopy to induce and observe ripple formation on diamond but could not detect any movement [13]. Habenicht et al observed moving ripples on Si [14], but the bombarded area was so small that its boundaries determined ripple development [15].…”
mentioning
confidence: 99%
“…Recently, Datta, Wu, and Wang used focused ion-beam microscopy to induce and observe ripple formation on diamond but could not detect any movement [13]. Habenicht et al observed moving ripples on Si [14], but the bombarded area was so small that its boundaries determined ripple development [15].…”
mentioning
confidence: 99%
“…This idea is given additional support by the experimental results of Ichim and Aziz. 8 Although we do find that highly regular ripples form for certain ranges of parameters, other types of patterns also emerge.…”
mentioning
confidence: 90%
“…Limited progress has been made in reducing the number of defects in surface ripples-for example, experiments have shown that few defects form near the boundary of a region subjected to OIIB. 8 Similarly, if the surface is pre-patterned with parallel trenches with a width equal to a few times the ripple wavelength, the ripples that form in the trenches tend to align with the trench walls, and the number of defects in the ripple patterns is small.…”
mentioning
confidence: 99%
“…The scan direction of the FIB can be irrelevant to the ripple orientation [4][5][6][7][8][9], with a caveat that the scan pattern is a wellcontrolled, overlapping-digital pattern. Even boundary conditions can be the same for FIB or static beams [4][5][6], however FIB generally creates 3-D geometries, and boundary conditions such as aspect ratio are paramount to FIB processing [7][8]. As we etch deeper, the yield drops.…”
Section: Introductionmentioning
confidence: 99%
“…Modulations can depend on many parameters [2][3][4][5][6][7][8][9][10]: intrinsic to the ion beam (eV, angle, species, dose); intrinsic to the sample (species, crystallography, grain orientations, boundary conditions such as pre-patterned 3-dimensional geometries [4][5][6] or interfaces and crater sidewalls [7][8]11]); and/or extrinsic (temperature, chemical enhancers). Ripples can develop independent of whether a big static ion beam or a Focused Ion Beam is used [3][4][5][6][7]. The scan direction of the FIB can be irrelevant to the ripple orientation [4][5][6][7][8][9], with a caveat that the scan pattern is a wellcontrolled, overlapping-digital pattern.…”
Section: Introductionmentioning
confidence: 99%