Lateral Self-Aligned p-Type In₂O₃ Nanowire Arrays Epitaxially Grown on Si Substrates

Abstract

Lateral orientated growth of In 2 O 3 nanowire (NW) and nanorod (NR) arrays has been achieved by a vapor transport and condensation method on (001) and (111) surfaces of Si substrates. The single crystalline In 2 O 3 NWs and NRs were grown along [21 h1 h] in parallel to the Si ±[11 h0] and lying in the substrate plane. The electrical measurements show that the In 2 O 3 NWs are p-type semiconductor. By N + doping, the resistivity of the In 2 O 3 NWs has been tuned. The lateral self-aligned In 2 O 3 NW and NR arrays on Si can offer some unique advantages for fabricating parallel nanodevices that can be integrated directly with silicon technology.

Ultrasensitive and ultraselective detection of H2S using electrospun CuO-loaded In2O3 nanofiber sensors assisted by pulse heating

“…It has been demonstrated that a decrease in size of the In 2 O 3 crystallites in the sensing layer can considerably enhance the response [38]. Thus, there have been a large number of researches on the synthesis and characterization of nanostructured In 2 O 3 [39]. The enhancement of the gas-sensing characteristics by the formation of nanocomposites, such as In 2 O 3 -ZnO, In 2 O 3 -SnO 2 , and In 2 O 3 -CeO 2 [38,40,41] was also explored.…”

Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature

“…One-dimensional (1-D) metal-oxide nanostructures are currently the subject of much interest both for their novel structures and physical properties and for their potential applications in nanoelectronics and nanophotonics [1][2][3]. Many kinds of 1-D oxide, such as ZnO and SnO 2 , have been fabricated and studied.…”

Growth and photoluminescence properties of vertically aligned SnO2 nanowires

“…Although still challenging, procedures for achieving horizontal alignment of NWs are somewhat less restrictive since they are not limited to the direct growth of horizontally aligned NS [1,2] but can also be aligned using liquid suspensions of presynthesized NWs as well [3,4]. However, methods for obtaining vertically aligned semiconductor oxide NS require epitaxial growth, and in fact, vertically aligned NS of Ga 2 O 3 [5], InAs [6], In 2 O 3 [7,8], ZnGa 2 O 4 [9] and ZnO [10,11] have been successfully synthesized in this way. Currently, ZnO NWs have attracted a significant amount of attention due to the relative simplicity of their synthesis under a variety of conditions [12][13][14][15] and due to the wide array of potential applications (e.g., sensing [16], piezoelectricity [17] and field emission [18,19]).…”