Lateral photovoltaic effect observed in nano Au film covered two-dimensional colloidal crystals

Liu, Shuai; Wang, Hui; Yao, Yanjie; Chen, Ling; Wang, Zhenlin

doi:10.1063/1.4869223

Cited by 31 publications

(16 citation statements)

References 19 publications

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“…1a , when the laser spot is impinging on the ZnO side of nanostructures (see the inset of Fig. 1b ), all the values of measured LPVs in these systems basically have presented with linear change trend versus the laser spot position as we have reported before 9 . The nonlinearity (spatial resolution for 100 μm) of the effective linear area (namely the distance between the innermost side of the two contacts) was kept in a range of 3–10% in this report.…”

Section: Resultssupporting

confidence: 73%

“…On this account, series of jobs recently have been carried out aiming to seek much more reasonable systems which could present with better sensitivity and higher linearity such as hydrogenated amorphous silicon 1 2 3 , quantum dots 4 , and the blended perovskite based heterojunctions 5 since it was first discovered by Schottky 6 and then expanded by Wallmark in floating Ge p-n junctions in 1957 7 . To date, stemming from this desire, our group also have proposed a variety of nano metal (metal-oxide)-semiconductor (MS/MOS) type or MOS-related structures and have achieved a great deal of remarkable photoelectric effect, including large LPE 4 8 9 10 11 and laser-induced bipolar resistance effect 12 13 .…”

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confidence: 99%

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Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure

Zhang

Wang

Gan

et al. 2016

Sci Rep

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We report substantially enlarged lateral photovoltaic effect (LPE) in the ZnO/Ag/Si nanostructures. The maximum LPE sensitivity (55.05 mv/mm) obtained in this structure is about seven times larger than that observed in the control sample (7.88 mv/mm) of ZnO/Si. We attribute this phenomenon to the strong localized surface plasmon resonances (LSPRs) induced by nano Ag semicontinuous films. Quite different from the traditional LPE in PN junction type structures, in which light-generated carriers contributed to LPE merely depends on direct excitation of light in semiconductor, this work firstly demonstrates that, by introducing a super thin metal Ag in the interface between two different kinds of semiconductors, the nanoscale Ag embedded in the interface will produce strong resonance of localized field, causing extra intraband excitation, interband excitation and an enhanced direct excitation. As a consequence, these LSPRs dominated contributions harvest much more carriers, giving rise to a greatly enhanced LPE. In particular, this LSPRs-driven mechanism constitutes a sharp contrast to the traditional LPE operation mechanism. This work suggests a brand new LSPRs approach for tailoring LPE-based devices and also opens avenues of research within current photoelectric sensors area.

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Section: Resultssupporting

confidence: 73%

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confidence: 99%

Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure

Zhang

Wang

Gan

et al. 2016

Sci Rep

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“…Many researchers have been attracted toward good performance photoelectric devices based on LPE, such as position‐sensitive detectors, which are widely applied to precision measurement of microdisplacement and vibration detection. In the past few decades, LPE has been achieved in multifarious structures, such as quantum dots embedded metal semiconductors, metal films covered colloidal crystals, perovskite‐type p–n heterojunctions, and graphene oxide films . In Schottky barrier structures, electron–hole pairs (EHPs) are produced locally at the illuminated position when a laser beam irradiates on the surface.…”

Section: Introductionmentioning

confidence: 99%

Localized Surface Plasmon Induced Position‐Sensitive Photodetection in Silicon‐Nanowire‐Modified Ag/Si

Mei

Liu

Huang

et al. 2017

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Surface plasmon-based approaches are widely applied to improve the efficiency of photoelectric devices such as photosensors and photocells. In order to promote the light absorption and electron-hole pair generation in devices, metallodielectric nanostructures are used to boost the growth of surface plasmons. Here, silicon nanowires (SiNWs) are used to modify a metal-semiconductor structure; thus, Ag/SiNWs/Si is manufactured. In this system, a large increased lateral photovoltaic effect (LPE) is detected with a maximum positional sensitivity of 65.35 mV mm , which is ≈53-fold and 1000-fold compared to the conventional Ag/Si (1.24 mV mm ) and SiNWs/Si (0.06 mV mm ), respectively. It is demonstrated that localized surface plasmons (LSPs) contribute a lot to the increment of LPE. Furthermore, through the surface-enhanced Raman scattering spectra of rhodamine-6G and finite-difference time-domain simulation, it is illustrated that silver-coated SiNWs support strong LSPs. The results propose an enhancement mechanism based on LSPs to facilitate the photoelectric conversion in LPE and offer an effective way to improve the sensitivity of photodetectors.

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“…Here, we present a review of LPE in the MS or MOS nanostructures. In certain conditions, LPE displays some attractive features due to its strong correlation with the surface or interface of materials . Usually, a metallic film of nanoscale deposited on a semiconductor will induce effects different from it in bulk materials, such as localized surface plasmon resonances .…”

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Lateral photovoltaic effect observed in nano Au film covered two-dimensional colloidal crystals

Cited by 31 publications

References 19 publications

Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure

Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure

Localized Surface Plasmon Induced Position‐Sensitive Photodetection in Silicon‐Nanowire‐Modified Ag/Si

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

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