Lateral photovoltaic effect in porous silicon

Abstract

Porous silicon has received considerable attention for its potential as a silicon-based visible light emitter. In this letter we introduce the lateral photovoltaic effect in porous silicon and show its origin in amphoteric dangling bond traps at the porous silicon surface, which also play a role in the light-induced photoluminescence degradation. The use of the lateral photoeffect for a wide area position-sensitive visible light detector is demonstrated. The lateral photoeffect also provides a new electrical technique to study the atmospheric interactions of porous silicon, with possible applications for vapor detection.

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

“…4, the most important feature of planar LPE devices. [1][2][3][4] This behavior is independent of the contact configuration with respect to the ground. It is worth noting that the T-LPE amplitude and shows a non-zero value when spot is centered exactly between the electrodes.…”

“…This potential difference is known as the lateral photovoltaic effect (LPE). [1][2][3][4] Since a few decades, the LPE has been reported in wide classes of systems ranging from organic semiconductors, 5 Ti/Si amorphous superlattices, 6 semiconductor heterostructures, 7 including two-dimensional electron systems (2DES). 8 On the practical side, the LPE has been widely used to develop high precision position-sensitive detectors (PSD).…”

Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of antireflective porous silicon coatings for silicon solar cells

“…Indeed PS possesses some advantages: (i) better uniformity [4] (ii) create simultaneously a selective emitter and an antireflection coating [6][7][8][9][10] (iii) enlarge the spectral sensitivity region of the solar cell [6] and (iv) a better control of the parameters (porosity and thickness) leading to an optimum ARC [7]. However, the surface recombination velocity strongly increases when using PS layers, due to the roughness of the surface [11][12][13]. The optical properties of PS layers may also degrade in time when no further treatment is used, such as rapid thermal oxidation (RTO), nitridation, anodic oxidation, thermal carbonization [14][15][16].…”

Near Infrared Lateral Photovoltaic Effect in LaTiO3Films

“…In order to improve the sensitivity and linearity of PSDs, many researchers have made efforts to study LPE in various kinds of materials systems, such as conventional p-n junctions, hydrogenated amorphous silicon based structures, porous silicon, Ti/Si amorphous superlattices, semiconducting polymer, metal-semiconductor and metal-insulatorsemiconductor structures, modulation-doped AlGaAs/GaAs heterostructure, and Cu 2 O nanoscale film, [3][4][5][6][7][8][9][10][11]. Almost all of the reported LPEs were applied in visible or ultraviolet region, while works concerning large LPE in near infrared (NIR) region have been rarely reported [10,11].…”