Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films

Kodolbaş, Alp Osman; Çomak, B.; Bacıogˇlu, A.; Öktü, Ö.

doi:10.1016/j.jnoncrysol.2005.01.005

Cited by 7 publications

(5 citation statements)

References 23 publications

(53 reference statements)

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“…This statement can also be represented as “an increase in sample conductivity is expected to decrease measured LPV,” which is reported by Kodolbas et al. in hydrogenated amorphous silicon (a‐Si:H) and hydrogenated amorphous silicon‐oxygen (a‐SiO:H) structures . The LPV results of a‐Si:H and a‐SiO:H are shown in Figure c,d.…”

Section: Lateral Photovoltaic Effectsupporting

confidence: 52%

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Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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Section: Lateral Photovoltaic Effectsupporting

confidence: 52%

Section: Lateral Photovoltaic Effectmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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“…The lower the resistivity is, the smaller the LPV. Reference [8] also concludes that an increase in layer (in which the photogenerated carriers diffuse laterally) conductivity is expected to decrease measured LPV.…”

Section: Resultsmentioning

confidence: 99%

Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures

Kong¹,

Wang²,

Xiao³

et al. 2008

J. Phys. D: Appl. Phys.

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Both lateral photovoltage (LPV) and positive magnetoresistance (MR) are observed in Co/Mn/Co/c-Si structure. The LPV shows a large sensitivity of 10 mV mm−1 as a laser spot is moved on a film surface. An apparent positive MR of 2.8% (at 4.2 K) is also found in the structure and is explained based on the enhanced scattering at the interface. The LPV is discussed in terms of the metal–semiconductor junction that exists between the film and the Si substrate. The combined properties add functionality to the single magnetic or optic property and facilitate matters for dual role devices that are both sensitive to the light and magnetic field.

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“…Because the lateral photovoltage (LPV) varies linearly with the laser spot position, LPE has been used in shaft encoders, charge-coupled devices, quadrant detectors, positionsensitive detectors, optical positioning sensors, and many other sensors [3][4][5][6]. Various structures such as perovskite PN junctions, modulated doped AlGaAs/GaAs heterostructures, hydrogenated amorphous silicon, Schottky barrier structures, silk protein-based nanocomposite structures, metal-oxidesemiconductor (MOS) structures, metal-semiconductor structures have been investigated by LPE [7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

Ling

Zhu

et al. 2022

Opt Rev

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The transient response of the lateral photovoltaic effect (LPE) was observed when Ti-SiO 2 -Si structure was irradiated by a 650 nm laser at room temperature. The lateral photovoltage (LPV) was measured by voltmeter, which is linearly dependent on the laser irradiation position. In this paper, we described the dynamic process of LPE when Ti-SiO 2 -Si was irradiated by laser. The LPE has high sensitivity of 59mV/mm and linearity of 0.9924, respectively. Furthermore, the experimental phenomenon is explained by the carrier diffusion theory. And a resistor-capacitor (RC) circuits model combines with traditional LPE is established to simulate the transient response. These results suggest that the Ti-SiO 2 -Si structure is a potential choice for optoelectronic devices applied in the sensors eld.

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Lateral photovoltage measurements in hydrogenated amorphous silicon and silicon-oxygen thin films

Cited by 7 publications

References 23 publications

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures

Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

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