Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective

Pal, Hridibrata; Singh, Smriti; Guo, Chenyu; Guo, Wei; Badami, Oves; Pramanik, Tanmoy; Sarkar, Biplab

doi:10.1007/s11664-022-10166-z

Cited by 3 publications

(1 citation statement)

References 33 publications

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“…Both of these values were adopted from previously available reports [51,52]. Further details about the simulation setup and GaN-related parameters can be found elsewhere [53,54]. Unlike those under a forward bias, tunneling analyses under a reverse bias are suitable for a wider range of applied bias.…”

Section: Resultsmentioning

confidence: 99%

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Yu,

Dai,

Tang

et al. 2024

Electronics

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We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–voltage (I–V) characteristics of the Ga- and N-polar GaN Schottky contact with and without SiNx was established. The insertion of SiNx helps in reducing the reverse leakage current for both structures, even though the leakage is still higher for N-polar GaN, consistent with the Schottky barrier height calculated using X-ray photoelectron spectroscopy. To optimize the electric property of the N-polar device, various substrate misorientation angles were adopted. Among the different misorientation angles of the sapphire substrate, the GaN MIS Schottky barrier diode grown on 1° sapphire shows the lowest reverse leakage current, the smoothest surface morphology, and the best crystalline quality compared to N-polar GaN grown on 0.2° and 2° sapphire substrates. Furthermore, the mechanism of the reverse leakage current of the MIS-type N-polar GaN Schottky contact was investigated by temperature-dependent I–V characterization. FP emissions are thought to be the dominant reverse conduction mechanism for the N-polar GaN MIS diode. This work provides a promising approach towards the optimization of N-polar electronic devices with low levels of leakage and a favorable ideality factor.

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Section: Resultsmentioning

confidence: 99%

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Yu,

Dai,

Tang

et al. 2024

Electronics

Self Cite

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Insights into Sub‐Thermionic Transport in Schottky Barrier FETs

Gauhar,

Bhattacharjee,

Badami

2024

Advcd Theory and Sims

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Boltzmann carrier statistics restrict the sub‐threshold swing (SS ≥ 60 mVdec–1) and, consequently, the supply voltage (≈ 1 V) of the thermionic transistor. This primary bottleneck results in rapidly increasing power consumption, heating, and associated reliability/scalability challenges as more devices are packed into a small footprint. Despite significant efforts from the device community, a suitable sub‐thermionic alternative is yet to emerge. In this work, an attempt is made to understand the physics of Schottky barrier FETs demonstrating SS < 60 mVdec–1, as evident in some experimental results. Employing the in‐house TCAD tool, the electrostatic potential in the device is accurately modeled with the sweeping gate bias. Next, the Tsu–Esaki model is used to compute the tunneling current. The analysis shows that the steep SS results from an abrupt change in the tunneling barrier profile, from a step‐like to a triangular‐like. However, in the ON regime, the drift component begins to dominate the transfer characteristics. Thus, the subtle interplay between the drift and tunneling components of transport leads to SS < 60 mVdec–1 in OFF‐state with improved in ON‐state. Finally, using the calibrated model, the performance metrics of an all‐2D material‐based CMOS inverter operating at a low VDD ≈ 0.6 V are projected.

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A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

Surucu,

Yıldız,

Yıldırım

2024

Appl. Phys. A

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This work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal–organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current–voltage (I–V), current–time (I–t), capacitance–time (C–t), and conductance time (G–t). The photodiode’s rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (Rs) and shunt resistance (Rsh). Rs values are calculated using Cheung’s functions, revealing the diode’s resistance behavior. The study also examines the photodiode’s photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device’s light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode’s behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.

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Lateral P–N Junction Photodiodes Using Lateral Polarity Structure GaN Films: A Theoretical Perspective

Cited by 3 publications

References 33 publications

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Insights into Sub‐Thermionic Transport in Schottky Barrier FETs

A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

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