Lateral movement and angular illuminating non-uniformity corrected TSOM image using Fourier transform

Peng, Renju; Jiang, Jie; Hao, Jiaao

doi:10.1364/oe.382748

Cited by 9 publications

(4 citation statements)

References 17 publications

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“…As the grey area of conventional brightfield techniques used in semiconductor manufacturing is around the 11 nm node, TSOM may extend the capability of a brightfield microscope by utilizing the enriched information through z-axis slicing [91]. As shown in figure 7, throughfocus images are stacked as a function of focus position, resulting in a 3D space containing optical information [36,55,92].…”

Section: Amplitude-based Optical Inspection Systemsmentioning

confidence: 99%

Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

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The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond. Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas: (1) the defect detectability evaluation, (2) the diverse optical inspection systems, and (3) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.

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Section: Amplitude-based Optical Inspection Systemsmentioning

confidence: 99%

Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu¹,

Liu²,

Xu³

et al. 2022

Int. J. Extrem. Manuf.

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show abstract

“…Through-focus scanning optical microscopy (TSOM) is a new, fast, non-destructive micro/nanoscale measurement method based on model-based, computational imaging, which can efficiently and low-cost, non-destructive measurement of targets ranging from nanometers to micrometers in size [12][13] . The features of the TSOM image are sensitive to nanoscale size changes of the measurement target and can circumvent the diffraction limit of optical imaging [14] .…”

Section: Introductionmentioning

confidence: 99%

Research on TSOM detection method for subsurface defects of optical components

wang,

liu,

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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“…The dimensional information of the target is extracted by matching the intensity information with the simulation results in the database. For improving the performance, great attention has been paid to minimizing the dissimilarities between the intensity information acquisition and simulation conditions [12][13][14][15][16][17][18][19]. In the meantime, model-based TSOM utilizes only the optical intensity range and the mean-square intensity information of the TSOM image; hence, large amounts of intensity distribution information correlated to the dimensional information of the targets is ignored.…”

Section: Introductionmentioning

confidence: 99%

MEMS High Aspect Ratio Trench Three-Dimensional Measurement Using Through-Focus Scanning Optical Microscopy and Deep Learning Method

Shi

Gao

et al. 2022

Applied Sciences

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High-aspect-ratio structures have become increasingly important in MEMS devices. In situ, real-time critical dimension and depth measurement for high-aspect-ratio structures is critical for optimizing the deep etching process. Through-focus scanning optical microscopy (TSOM) is a high-throughput and inexpensive optical measurement method for critical dimension and depth measurement. Thus far, TSOM has only been used to measure targets with dimension of 1 μm or less, which is far from sufficient for MEMS. Deep learning is a powerful tool that improves the TSOM performance by taking advantage of additional intensity information. In this work, we propose a convolutional neural network model-based TSOM method for measuring individual high-aspect-ratio trenches on silicon with width up to 30 μm and depth up to 440 μm. Experimental demonstrations are conducted and the results show that the proposed method is suitable for measuring the width and depth of high-aspect-ratio trenches with a standard deviation and error of approximately a hundred nanometers or less. The proposed method can be applied to the semiconductor field.

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Lateral movement and angular illuminating non-uniformity corrected TSOM image using Fourier transform

Cited by 9 publications

References 17 publications

Optical wafer defect inspection at the 10 nm technology node and beyond

Optical wafer defect inspection at the 10 nm technology node and beyond

Research on TSOM detection method for subsurface defects of optical components

MEMS High Aspect Ratio Trench Three-Dimensional Measurement Using Through-Focus Scanning Optical Microscopy and Deep Learning Method

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