Lateral induced dipole moment and polarizability of excitons in a ZnO single quantum disk

Dujardin, F.; Feddi, E.; Oukerroum, A.; Bailach, J. Bosch; Martínez‐Pastor, Juan P.; Assaid, E.

doi:10.1063/1.4792047

Cited by 16 publications

(8 citation statements)

References 49 publications

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“…The polarizability of both lh and hh-exciton strongly increases with the well width and gradually decreases with electric field increases up to F = 150 kV cm -1 , beyond which the polarizability remains unchanged. 19,24 This is consistent with our result shown in Figures 2 and 3 that the applied electric field reduces the kinetic energy of electron and hole, hence binding energy of the exciton increases with the electric field. Polarizability of the exciton is sensitive to the well width for lower strength of electric field and insensitive for higher strength of electric field.…”

Section: Resultssupporting

confidence: 92%

“…It is observed that the Stark shift decreases as the electric field increases, since the exciton energy shifts monotonically towards lower energy as the electric field increases due to the quantum-confined Stark effect. This behaviour is in good agreement with the results reported by Wu et al and Dujardin et al 19,24 It is also noted that the Stark effect on exciton energy with large well width is less than that with small well width and it shows nearly linear behaviour with electric field. The negative values of Stark shift indicate a red shift in the exciton energy in the presence of electric field.…”

Section: Resultssupporting

confidence: 92%

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Polarizability of Exciton in Surface Quantum Well

Anitha¹,

Arulmozhi²

2019

JPS

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Surface quantum wells are seeking considerable attention due to their asymmetrical nature of polarized interface and its consequences. Their results with and without external perturbations are expected to be remarkably different from their counterparts in symmetrical quantum wells. Effect of electric field on binding energies of light hole and heavy hole exciton in surface quantum well composed of vacuum/GaAs/Ga 1-x Al x As are theoretically calculated as a function of well width and Al composition. Effect of image charges arising due to the mismatch of the dielectric constant at the vacuum/GaAs interface is considered. Stark shift and polarizability of exciton in this surface quantum well is also calculated for various strengths of electric field with different well width confinement as well as Al concentration. Our results show that: (1) exciton binding energy increases as the electric field applied along the growth axis increases; (2) stark shift in exciton energy decreases as electric field, Al composition and well width increase; and (3) polarizability of exciton decreases when the electric field increases, but increases when well width increases. Variation of our results with those for other symmetrical wells will provide a choice of the well for electric field applications.

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Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 92%

Polarizability of Exciton in Surface Quantum Well

Anitha¹,

Arulmozhi²

2019

JPS

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“…Following the same analysis as in Ref. , electron and hole orbitals are only extended in the xy plane, and the coulombic interactions can be considered only important in the disk plane. Indeed, the coulombic potential can be approximated by

V_{c} = \frac{- e^{2}}{ϵ true(P true) ρ_{e h}}

.…”

Section: Background Theorymentioning

confidence: 99%

Optical Absorption of Excitons in Strained Quasi 2D GaN Quantum Dot

Aghoutane

El-Yadri

Aouami

et al. 2019

Physica Status Solidi (b)

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The influences of hydrostatic pressure combined to the size effect on the behavior of the exciton in 2D GaN/AlN quantum ultra‐thin disk, on the binding energy and optical absorption coefficient are investigated. Our approach is performed in the framework of effective mass theory and by using a variational method with a robust trial wave function and taking into account the dependence of the size, the dielectric constant and the effective masses on the pressure. Variations of the excitonic binding energy, optical transition energy are determined according to hydrostatic pressure. The results of our numerical calculations show that the applied pressure favors the electron–hole attraction leading to an increase of the ground state exciton binding energy, and causes a shift of the absorption coefficient toward high energies (blue shift).

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“…Among the important optical properties in such nanostructures are attributed to excitonic complexes transitions such as exciton X, biexciton X 2 , exciton bound to a donor (D 0 , X), exciton bound to an acceptor (A 0 , X) and exciton bound to an ionized donor (D + , X). Whether in bulk or confined medium, numerous experimental and theoretical research have studied and identified the spectral lines attributed to these transitions [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

et al. 2021

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This theoretical study is devoted to the effects of pressure and temperature on the optoelectronic properties assigned to the first lowest transition of the (D+,X) excitonic complex (exciton-ionized donor) inside a single AlAs/GaAs/AlAs spherical quantum dot. Calculations are performed within the effective mass approximation theory using the variational method. Optical absorption and refractive index as function of the degree of confinement, pressure, and temperature are investigated. Numerical calculation shows that the pressure favors the electron-hole and electron-ionized donor attractions which leads to an enhancement of the binding energy, while an increasing of the temperature tends to reduce it. Our investigations show also that the resonant peaks of the absorption coefficient and the refractive index are located in the terahertz region and they undergo a shift to higher (lower) therahertz frequencies when the pressure (temperature) increases. The opposite effects caused by temperature and pressure have great practical importance because they offer an alternative approach for the adjustment and the control of the optical frequencies resulting from the transition between the fundamental and the first excited state of exciton bound to an ionized dopant. The comparison of the optical properties of exciton, impurity and (D+,X) facilitates the experimental identification of these transitions which are often close. Our investigation shows that the optical responses of (D+,X) are located between the exciton (high energy region) and donor impurity (low energy region) peaks. The whole of these conclusions may lead to the novel light detector or source of terahertz range.

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Lateral induced dipole moment and polarizability of excitons in a ZnO single quantum disk

Cited by 16 publications

References 49 publications

Polarizability of Exciton in Surface Quantum Well

Polarizability of Exciton in Surface Quantum Well

Optical Absorption of Excitons in Strained Quasi 2D GaN Quantum Dot

Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

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