Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV

Huang, W.; Chow, T. Paul; Niiyama, Yuki; Nomura, Takahiro; Yoshida, Seikoh

doi:10.1109/ispsd.2008.4538956

Cited by 33 publications

(26 citation statements)

References 8 publications

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“…The fabrication of enhancement mode (normally‐off) HEMTs is probably the most important challenge for the applications of GaN in power electronics . In fact, power electronic circuits rely on normally‐off devices to provide adequate safety conditions for the equipment and for the users .…”

Section: Algan/gan Hemtsmentioning

confidence: 99%

Challenges for energy efficient wide band gap semiconductor power devices

Roccaforte

Fiorenza

Greco

et al. 2014

Phys. Status Solidi A

113

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Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium nitride (GaN), are very promising materials for the next generation of power electronics, to guarantee an improved energy efficiency of devices and modules. As a matter of fact, in the last decade intensive academic and industrial research efforts have resulted in the demonstration of both 4H‐SiC MOSFETs and GaN HEMTs exhibiting VnormalB2/Ron performances well beyond the silicon limits. In this paper, some of the present scientific challenges for SiC and GaN power devices technology are reviewed. In particular, the topics selected in this work will be the SiO2/SiC interface passivation processes to improve the channel mobility in 4H‐SiC MOSFETs, the current trends for gate dielectrics in GaN technology and the viable routes to obtain normally‐off HEMTs.

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Section: Algan/gan Hemtsmentioning

confidence: 99%

Challenges for energy efficient wide band gap semiconductor power devices

Roccaforte

Fiorenza

Greco

et al. 2014

Phys. Status Solidi A

113

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“…With a high quality SiO 2 /GaN interface, GaN MOSFETs are viable. Lateral GaN MOSFETs with high channel mobility (170 cm 2 /V·s), which is correlated with the low interface state density and high blocking voltage (2.5 kV) have been demonstrated [37]. Lateral MOSFETs have been fabricated on p-GaN epilayer on sapphire substrates.…”

Section: Gan Power Devicesmentioning

confidence: 99%

Wide Band Gap Semiconductor Devices for Power Electronics

2012

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It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed. Key words: SiC, GaN, Power devices, Rectifiers, MOSFETs, HEMTsWide Band Gap poluvodički sklopivi za učinsku elektroniku. U današnje vrijeme napredak u polju učinske elektronike prvenstveno dolazi razvojem i uporabom Wide Band Gap (WGB) poluvodičkih uredaja. WBG poluvodiči kao Sic, GaN i dijamant pokazuju iznimna svojstva materijala, što omogućuje korištenje pri brzim promjenama stanja, visokim naponima i visokim temperaturama. Ova jedinstvena svojstva osiguravaju kvalitativne promjene njihovom primjenon u obradi energije. Od početnih energenata (ugljen, ulje, plin ili obnovljivi izvori) do završne faze korištenja (kućanstvo, prijevoz, industrija) električna energija prolazi kroz različite faze pretvorbe energije koje su trenutno prilično neefikasne očemu govori podatak da se samo 20% početne energije iskoristi u konačnoj fazi. WGB poluvodiči povečavaju efikasnost pretvorbe zahvaljujući izvanrednim svojstvima materijala. U radu je dan pregled nedavnog napretka u razvoju visoko-naponskih WGB poluvodiča, posebno SiC i GaN te je dan pregled svojstava predstavljenih ispravljača i sklopki. Takoder u radu su opisani materijali i tehnologija WGB poluvodičkih uredaja te je opisan budući trend u razvoju uredaja i njihovom korištenju u industriji.

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“…3 MV/cm was used in the design as maximum allowed field in the oxide to prevent the oxide breakdown and guarantee the long term device reliability. As a result, the RESURF dose is usually designed to be lower than the optimal value to protect the gate oxide [8] (see Fig. 3).…”

Section: Contributedmentioning

confidence: 99%

Drift region optimization in high‐voltage GaN MOS‐gated HEMTs

Chow

2011

Phys. Status Solidi C

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The design of AlGaN/GaN heterojunction in high‐voltage lateral GaN MOS‐HEMT was studied and optimized. The effect of the heterojunction on the breakdown voltage of the device was studied using numerical simulations. The effect of the addition of a GaN cap layer on top of the AlGaN/GaN structure was evaluated, showing a higher breakdown voltage as well as a lower oxide field at the gate corner, due to the better Reduced Surface Field (RESURF) effect that originated from the balanced polarization charges. Further a 2‐zone RESURF design was achieved by etching part of the GaN cap in the drift region. The 2‐zone RESURF device showed 33% improvement in breakdown voltage from simulations compared with single zone RESURF devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV

Cited by 33 publications

References 8 publications

Challenges for energy efficient wide band gap semiconductor power devices

Challenges for energy efficient wide band gap semiconductor power devices

Wide Band Gap Semiconductor Devices for Power Electronics

Drift region optimization in high‐voltage GaN MOS‐gated HEMTs

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