2011
DOI: 10.1002/pssr.201004488
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Lateral IBIC characterization of single crystal synthetic diamond detectors

Abstract: In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p-type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral… Show more

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Cited by 10 publications
(7 citation statements)
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“…Therefore both drift and diffusion contribution to the current due to photogenerated carriers must be taken into account. Previous results 11,26 show that the diffusion length L is about 2.6 lm. This value is added to the depletion layer thickness calculated from the C-V curves to evaluate the effective thickness of the active diamond layer of XR-PDs.…”
Section: B Soft X-ray Characterizationmentioning
confidence: 88%
“…Therefore both drift and diffusion contribution to the current due to photogenerated carriers must be taken into account. Previous results 11,26 show that the diffusion length L is about 2.6 lm. This value is added to the depletion layer thickness calculated from the C-V curves to evaluate the effective thickness of the active diamond layer of XR-PDs.…”
Section: B Soft X-ray Characterizationmentioning
confidence: 88%
“…Both the width and the gap between the electrodes were 10 µm, in order to provide an equivalent sample for direct comparison with the performances of the 3D detector. In the following, this diamond planar detector In both devices, the metal contacts form a Schottky barrier with the CVD diamond surface [20,21], which has a typical effective acceptor concentration of the order of ~10 14 cm -3 , as reported in previous works [22,Ciancaglioni]. An I-V characteristic (not reported here) of the 3D detector showed a linear, symmetric behavior, reaching typical values of 1 pA at ±20 V. Due to the planar geometry of the Cr grooves, the observed trend was attributed to the reverse current associated with the presence of back-to-back Schottky contacts at the electrodes, preventing a direct polarization current flowing through the device.…”
Section: Methodsmentioning
confidence: 86%
“…Figure 10A shows a schematic representation of the CVD diamond detector described. Characterisation by means of IBIC and lateral IBIC analysis showed a well defined SV and a 100% CCE in the sensitive region without any incomplete CCE regions and any charge collection outside of the SV, [99,100]. A variation of the fabrication technique has been recently studied by Verona et al [101].…”
Section: Diamond-based Microdosimetrymentioning
confidence: 99%