Lateral enlargement of silicon carbide crystals

Jacobson, Henrik; Yakimova, Rositsa; Råback, Peter; Syväjärvi, Mikael; Henry, Anne; Tuomi, T.; Janzén, Erik

doi:10.1016/j.jcrysgro.2004.05.108

Cited by 5 publications

(5 citation statements)

References 4 publications

(5 reference statements)

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“…The change in flow and temperature fields at the lateral growth interface can potentially induce different defects in the expanded diameter region (EDR) of the SiC ingot. 12 Therefore, the multiple-expanding diameter growth process poses a significant challenge. Defects in the SiC wafers can reduce carrier mobility and critical breakdown voltage, thereby impairing the performance and lifespan of SiC-based devices.…”

Section: ■ Introductionmentioning

confidence: 99%

“…During this multiple-expanding diameter growth process, SiC crystals grow both vertically and laterally, with the lateral growth supported by a conical seed holder. The change in flow and temperature fields at the lateral growth interface can potentially induce different defects in the expanded diameter region (EDR) of the SiC ingot . Therefore, the multiple-expanding diameter growth process poses a significant challenge.…”

Section: Introductionmentioning

confidence: 99%

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Micropipe-Like Defects in the Expanded Diameter Region of 8 in. SiC Grown by Physical Vapor Transport

Song,

Yang,

et al. 2023

Crystal Growth & Design

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This study presents the growth of 8 in. silicon carbide (SiC) single crystals using a multiple-expanding diameter growth process via the physical vapor transport technique, with commercial 6 in. n-type SiC of 4° off-axis toward [11 0] as the seed. Micropipe-like defects were observed in the expanded diameter region, whereas they are absent in the unexpanded diameter region grown on the SiC seed via step-flow growth mode. Optical microscopy, scanning electron microscopy, micro-Raman spectroscopy, laser scanning confocal microscopy, defect-tracking experiments, and energy-dispersive spectroscopy were employed to investigate the morphology, polytype, and formation mechanism of the defects. The micropipe-like defects, with diameters in the dozens of micrometers scale and an angle ∼50° relative to the [000 ] direction, were found to stem from carbon particles decomposed from SiC powders. No other polytype inclusions were observed in these defects. By applying sintered SiC powders as starting materials, micropipe-like defects were effectively reduced. Our results provide an efficient method for growing large-size SiC single crystals of high-quality and low-defect density via the multiple-expanding diameter growth process.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Micropipe-Like Defects in the Expanded Diameter Region of 8 in. SiC Grown by Physical Vapor Transport

Song,

Yang,

et al. 2023

Crystal Growth & Design

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“…[5][6][7][8] Indeed, 6H-and 4H-SiC crystals 5,6 up to 35 mm in diameter and 20 mm in height 6 were produced with significant density reduction in threading dislocations and micropipes in the lateral crystal part compared to those of the seed. 6,9,10 However, the other defects nonspecific in conventional SiC growth, such as stacking faults, 10 pores and agglomerations of micropipes, 9 were commonly present.…”

Section: Introductionmentioning

confidence: 99%

“…Unlike single-faceted boules grown along the basal plane normal [0001], they exhibit prismatic and rhombohedral facets in addition to the basal plane one. 6,9,10 So "faceted crystals" is another name for free-spreading ones. Owing to their faceted structure, free-spreading crystals are served as prismatic 11 or rhombohedral 12,13 plane seeds.…”

Section: Introductionmentioning

confidence: 99%

Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals

Argunova¹,

Gutkin

et al. 2014

CrystEngComm

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Using synchrotron X-ray topography and phase-contrast imaging, we investigated lattice defects in bulk SiC crystals grown by physical vapor transport in a free spreading condition. We find that polytype inclusions appearing at initial growth stage are overgrown by the matrix, making pores which are then transformed into micropipes with a low density of 10 cm −2 , in particular, in the lateral region. We propose that complex planar defects configured from dislocations and micropipes are transformed into slit pores via vacancy-diffusion and micropipes-attraction mechanisms. Our finding suggests that suppression of the nucleation of foreign polytype inclusions is a key approach for providing high quality free spreading SiC growth.CrystEngComm, 2014, 16, 8917-8923 | 8917This journal is

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“…Methods of controlling such defects were studied and the most important parameter for enhancing radial expansion growth quality was believed to be the radial temperature gradient. 55…”

Section: Bulk Growth Of α-Sicmentioning

confidence: 99%

Silicon carbide epitaxial growth using methylsilanes as gas sources

Peng¹

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Large area and high quality SiC substrates are required for many applications. The goal of this research is to develop novel methods of growing epitaxial silicon carbide (SiC) on 6H-SiC and silicon (Si) substrates while extending our understanding of the growth mechanisms and the effects of key growth parameters. High temperature hydrogen-etching procedures for preparing atomically-stepped 6H-SiC substrates suitable for epitaxial growth were also developed. This dissertation presents results of both homoepitaxial SiC growth on 6H-SiC substrates and heteroepitaxial growth on Si substrates by gas source molecular beam epitaxy. The experimental variables included gas species, molecular flux, growth time, and substrates growth temperature. In particular, the growth species considered here were methylsilane and dimethylsilane, and the substrate temperatures were 700°C and 800°C. The thin films grown in these studies were characterized by Auger electron spectroscopy, reflection high Energy electron diffraction, field emission scanning electron microscopy, and atomic force microscopy.

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Lateral enlargement of silicon carbide crystals

Cited by 5 publications

References 4 publications

Micropipe-Like Defects in the Expanded Diameter Region of 8 in. SiC Grown by Physical Vapor Transport

Micropipe-Like Defects in the Expanded Diameter Region of 8 in. SiC Grown by Physical Vapor Transport

Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals

Silicon carbide epitaxial growth using methylsilanes as gas sources

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