Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

Seger, Johan; Hellström, Per‐Erik; Lu, Jun; Malm, B. Gunnar; Haartman, Martin von; Östling, Mikael; Zhang, S.-L.

doi:10.1063/1.1944888

Cited by 37 publications

(15 citation statements)

References 14 publications

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“…Subsequently, one wafer was silicided using 4 nm of deposited Ni and annealed at 400 • C in a single wafer rapid thermal furnace for 120 s. The choice of this Ni thickness is thin enough to avoid "oversilicidation" of the NW S/D regions, which would otherwise result in excessive lateral silicide encroachment similar to that observed in [8].…”

Section: Resultsmentioning

confidence: 96%

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (Sub 10 nm) Si-Nanowire Transistors

Jiang

Liow

Singh

et al. 2009

IEEE Electron Device Lett.

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This letter demonstrates successful integration of Gate-All-Around (GAA) nanowire (NW) transistors with lowresistivity metallic NW point contacts at source/drain extensions. Ultrascaled GAA silicon NW transistors with gate lengths down to 8 nm have been achieved, exhibiting good performance among the NW FETs reported to date. Compared to the reference devices, the metallic contact NW devices show 580% enhancement in I ON from 103 to 705 μA/μm, at a fixed I OFF of 10 nA/μm. Nickel silicide resistivity for ultrathin films is also investigated in this letter for the integration of salicided source/drain extensions with the GAA NW process. Experimental results show that 4 nm of deposited Ni is suitable for forming NW contacts with 10-nm diameters, which is thin enough to avoid oversilicidation while meeting the low-resistivity requirements.Index Terms-Gate-all-around (GAA) silicon nanowire (SiNW), metallic nanowire (NW) contacts, sheet resistance, ultrathin silicide film.

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Section: Resultsmentioning

confidence: 96%

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (Sub 10 nm) Si-Nanowire Transistors

Jiang

Liow

Singh

et al. 2009

IEEE Electron Device Lett.

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“…The longitudinal Ni diffusion process described here differs from those found in literature to create Ni-silicide NWs because they utilize the radial diffusion of Ni deposited directly onto the surface of either synthesized Si-NWs 19 or lithographically defined polycrystalline Si-NWs . Lateral diffusion of Ni into thin silicon on insulator layers has been previously reported, , where two-dimensional Ni-silicide regions were formed. The method shown here introduces the one-dimensional case.…”

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confidence: 92%

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

et al. 2006

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Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10-30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 10(7). The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 microm, and decreased exponentially for gate lengths exceeding 1 microm.

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“…6,7 The reason for this is the very recent improvement in the fabrication techniques, which permitted to synthesize good detector grade single crystal diamonds, optimized as neutron detector devices. [8][9][10][11] However, the fast neutron radiation hardness, which was proved for natural diamonds in a fission reactor spectrum, up to 1 ϫ 10 14 n / cm 2 before the spectroscopic properties start to degrade and up to 3 ϫ 10 16 n / cm 2 before the observation of efficiency changes, 4 was never reported in previous works with synthetic diamonds since a large degradation in the spectroscopic properties 6 was found already for a 14 MeV fluence greater than 5.5ϫ 10 13 n / cm 2 . Moreover, none of the above mentioned works report a qualitative and quantitative analysis about their findings on neutron radiation tolerance.…”

Section: Introductionmentioning

confidence: 98%

Radiation tolerance of a high quality synthetic single crystal chemical vapor deposition diamond detector irradiated by 14.8 MeV neutrons

Pillon

Angelone

Aielli

et al. 2008

Journal of Applied Physics

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Diamond exhibits many properties such as an outstanding radiation hardness and fast response time both important to design detectors working in extremely radioactive environments. Among the many applications these devices can be used for, there is the development of a fast and radiation hard neutron detector for the next generation of fusion reactors, such as the International Thermonuclear Experimental Reactor project, under construction at Cadarache in France. A technology to routinely produce electronic grade synthetic single crystal diamond detectors was recently developed by our group. One of such detectors, with an energy resolution of 0.9% as measured using an ²⁴¹Am α particle source, has been heavily irradiated with 14.8 MeV neutrons produced by the Frascati Neutron Generator. The modifications of its spectroscopic properties have been studied as a function of the neutron fluence up to 2.0×10¹⁴ n/cm². In the early stage of the irradiation procedure an improvement in the spectroscopic performance of the detector was observed. Subsequently the detection performance remains stable for all the given neutron fluence up to the final one thus assessing a remarkable radiation hardness of the device. The neutron damage in materials has been calculated and compared with the experimental results. This comparison is discussed within the nonionizing energy loss (NIEL) hypothesis, which states that performance degradation is proportional to NIEL

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Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator

Cited by 37 publications

References 14 publications

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (Sub 10 nm) Si-Nanowire Transistors

Nickel Salicided Source/Drain Extensions for Performance Improvement in Ultrascaled (Sub 10 nm) Si-Nanowire Transistors

Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

Radiation tolerance of a high quality synthetic single crystal chemical vapor deposition diamond detector irradiated by 14.8 MeV neutrons

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