2000
DOI: 10.1007/s100510050019
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Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristics

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Cited by 55 publications
(39 citation statements)
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“…Already without delay, this system has been noted for its high multistability of stationary domain states [Kastrup et al, 1994[Kastrup et al, , 1996Prengel et al, 1994], and bistability or higher multistability has been found in many other semiconductor nanostructures, see e.g. Meixner et al [2000]; Schöll [2001].…”
Section: Discussionmentioning
confidence: 99%
“…Already without delay, this system has been noted for its high multistability of stationary domain states [Kastrup et al, 1994[Kastrup et al, , 1996Prengel et al, 1994], and bistability or higher multistability has been found in many other semiconductor nanostructures, see e.g. Meixner et al [2000]; Schöll [2001].…”
Section: Discussionmentioning
confidence: 99%
“…For a certain voltage there exists a front with zero velocity. However, similar to uniform states on the middle branch, these stationary nonuniform states turn out to be unstable for any conventional external circuit with positive load [7].…”
Section: Introductionmentioning
confidence: 96%
“…It has been pointed out that the bistability provides a basis for formation of lateral current density patterns like traveling current density fronts [3][4][5][6] . Once triggered, such a front leads to switching of the structure between the on-and off-state, depending on the applied voltage [4][5][6][7] . Front propagation in the DBRT provides a unique example of nonlinear pattern formation in a system with quantum transport.…”
Section: Introductionmentioning
confidence: 99%
“…Recent theoretical work [4][5][6][7][8][9] has essentially focused on the qualitative behavior of current density fronts, whereas the possibility of their experimental observation crucially depends on quantitative parameters, first of all on the front propagation velocity and the front width. This is due to the limits of temporal resolution and finite lateral dimensions of DBRT structures.…”
Section: Introductionmentioning
confidence: 99%