Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

Wang, Yuanquan; Wang, Z. L.; Brown, Tony; Brown, April S.; May, G.S.

doi:10.1007/s11664-000-0121-5

Cited by 11 publications

(4 citation statements)

References 27 publications

(24 reference statements)

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“…Two possibilities are Cu-Pt ordering, which has previously been shown to produce transport anisotropy in GaInP, 1,10 and compositional modulation. 11,12 Although commonly observed at the higher temperatures associated with metalorganic chemical vapor deposition (MOCVD) growth, Cu-Pt ordering has also been observed in solid source MBE-grown material. 13 In order to investigate which phenomenon is dominant in this case, variable temperature polarized photoluminescence studies were performed.…”

Section: à3mentioning

confidence: 99%

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Haegel

Christian

Scandrett

et al. 2014

Applied Physics Letters

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Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300 K vary from ∼2000 to 400 cm2/V s and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

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Section: à3mentioning

confidence: 99%

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Haegel

Christian

Scandrett

et al. 2014

Applied Physics Letters

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“…Dislocations were also observed inside the GaInP layers with threading dislocations increasing in density with the number of epilayers. These dislocations were determined to be coincident with the presence of lateral compositional modulation in the GaInP layers [62]. The relationship between the microscopic processes occurring during growth and the observed microstructures is difficult to determine.…”

mentioning

confidence: 99%

Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy

Brown

May

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High-resolution x-ray diffraction was used to characterize and compare the exchange process at the interfaces of mixed anion heterostructures. Superlattices (SLs) formed by the Sb2 exposure of As-stabilized GaAs surfaces and the As4 exposure of Sb-stabilized GaSb surfaces were grown by molecular beam epitaxy and characterized. Interface composition profiles have been determined using full dynamical simulations of the SL structures that exhibited anion exchange. Comparisons between As-for-Sb exchange on GaSb and Sb-for-As exchange on GaAs are presented in order to better understand the chemical and physical processes that lead to anion exchange.

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“…1(a). It has been reported that the surface of InGaP tends to undulate easily even under a lattice-matched condition to GaAs [21,22], as seen in Fig.1(a).…”

Section: Methodsmentioning

confidence: 88%

Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

Mitsuhara

Watanabe

Yokoyama

et al. 2016

Journal of Crystal Growth

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Lateral compositional modulation in lattice-matched GaInP/GaAs heterostructures

Cited by 11 publications

References 27 publications

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP

Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy

Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

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