2001
DOI: 10.1063/1.1346622
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Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

Abstract: Al x Ga 1−x N  (x=0–0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ⩽9.67×105 V cm−1, which is roughly a factor of 20 lo… Show more

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Cited by 96 publications
(47 citation statements)
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“…Being stimulated by recent explosive success of nitride based lasers and light emitting diodes in blue and ultraviolet regions, electronic devices such as AlGaN/GaN heterostructure field effect transistors ͑HFETs͒, 1-3 high-power metalsemiconductor field effect transistors ͑MESFETs͒, 4 and power rectifiers 5 have also made remarkable progress in recent years, resulting in unprecedented high power performances in microwaves and millimeter wave regions. Many workers believe that the AlGaN/GaN HFET will become the key device in the next-generation high frequency power electronics.…”
Section: Introductionmentioning
confidence: 99%
“…Being stimulated by recent explosive success of nitride based lasers and light emitting diodes in blue and ultraviolet regions, electronic devices such as AlGaN/GaN heterostructure field effect transistors ͑HFETs͒, 1-3 high-power metalsemiconductor field effect transistors ͑MESFETs͒, 4 and power rectifiers 5 have also made remarkable progress in recent years, resulting in unprecedented high power performances in microwaves and millimeter wave regions. Many workers believe that the AlGaN/GaN HFET will become the key device in the next-generation high frequency power electronics.…”
Section: Introductionmentioning
confidence: 99%
“…The reverse breakdown voltage of these diodes can be controlled by the static induction effect. Also, GaN based Schottky diodes with a higher breakdown voltage have been reported [14,15]. However, there is no report for GaN SBD with a low on-state voltage.…”
Section: Introductionmentioning
confidence: 98%
“…Breakdown voltages of lateral GaN rectifiers on Sapphire substrates could be as high as 9.7 kV [25], but the forward voltage drop is still high. The interest of these diodes lies on their lower cost when implemented on Si or Sapphire substrates.…”
Section: Gan Power Devicesmentioning
confidence: 99%