Lasing in Group-IV Materials

Reboud, V.; Buca, D.; Sigg, H.; Hartmann, Jean‐Michel; Ikonić, Z.; Pauc, N.; Calvo, V.; Chelnokov, A.

doi:10.1007/978-3-030-68222-4_3

Cited by 10 publications

(3 citation statements)

References 239 publications

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“…However, these lasers have extremely high lasing threshold current density [25]. The drawbacks of indirect bandgap Ge can be overcome by introducing high tensile strain, resulting in increased material gain [26]. Another approach is to alloy tin (Se) into Ge with a reasonably high Sn concentration (>6.5%) to achieve direct bandgap.…”

Section: Group-iv-material-based Lasersmentioning

confidence: 99%

On-Chip Lasers for Silicon Photonics

Zhang,

Shankar,

Wang

2024

Photonics

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With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review.

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Section: Group-iv-material-based Lasersmentioning

confidence: 99%

On-Chip Lasers for Silicon Photonics

Zhang,

Shankar,

Wang

2024

Photonics

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“…As far as complementary metal-oxidesemiconductor (CMOS) technologies are concerned, GeSn can be used as high-mobility channel or as source and drain stressor [1]- [4]. Since the first demonstration of an optically pumped direct-bandgap GeSn laser in 2015 [5], the interest of using GeSn for Si-based photonics has not slowed down [6]. Innovative Mid Infra-Red (MIR) GeSn-based devices such as Light Emitting Diodes (LEDs) [7], photo-detectors [8], electrically pumped lasers at low temperature [9] and optically pumped lasers at room-temperature have thus been reported [10]- [12].…”

Section: Introductionmentioning

confidence: 99%

Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys

Quintero,

Alba,

Hartmann

et al. 2023

IEEE J. Electron Devices Soc.

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In this study, we have conclusively used UVnanosecond laser annealing (UV-NLA) as an alternative to classical rapid thermal annealing (RTA) for the formation of stable Ni-GeSn alloys. The phase formation sequence was similar to the one obtained with RTA. At low laser energy densities (ED) and after the consumption of Ni, the Ni-rich phase, Ni5(GeSn)3, was first obtained. This phase was followed, for higher ED, by the mono-stanogermanide phase Ni(GeSn). Surface wrinkles appeared at high ED, resulting in a sheet resistance (Rsh) increase. Meanwhile, Rsh variations were mainly governed by the phases that were present at lower ED. By combining various analyses, we did not see any Ni(GeSn) agglomeration or Sn segregation. The use of UV-NLA yielded thermally stable Ni(GeSn) contact layers.

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“…Thanks to its superior electronic properties, Ge can be used as a channel material in p-type Metal Oxide Semiconductor transistors (high hole mobility) [1] or in low power devices such as tunnelling field effect transistors (steep sub-threshold swing operation) [2]. Furthermore, Ge is a key enabler in numerous optoelectronic devices such as light emitters [3] or photo-detectors [4]. The epitaxial growth of Ge on Si is far from being lattice matched, however (4.2% difference between Si and Ge), making high quality growth difficult, especially for thick layers.…”

Section: Introductionmentioning

confidence: 99%

Ge Nano-Heteroepitaxy: From Nano-Pillars to Thick Coalesced Layers

Mastari¹,

Charles²,

Pimenta-Barros³

et al. 2022

ECS Trans.

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Ge epitaxy on nanometer-size Ge pillars was studied in a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. A patterning scheme based on diblock copolymer lithography was used to fabricate honeycombed nanometer-sized Si templates for the hetero-epitaxy of Ge nano-pillars. It was highly selective and uniform at 600°C. Thick Ge layers were then grown with a low temperature/high temperature approach on Ge nano-pillars and characterized by Atomic Force Microscopy, X-Ray Diffraction and cross-sectional Transmission Electron Microscopy. A degraded surface morphology, with otherwise similar structural properties was obtained for 2D Ge layers grown on Ge nano-pillars compared to growth on bulk Si. Defects such as stacking faults and twins also formed during the coalescence process.

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Lasing in Group-IV Materials

Cited by 10 publications

References 239 publications

On-Chip Lasers for Silicon Photonics

On-Chip Lasers for Silicon Photonics

Use of Nanosecond Laser Annealing for Thermally Stable Ni(GeSn) Alloys

Ge Nano-Heteroepitaxy: From Nano-Pillars to Thick Coalesced Layers

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