Laser terahertz-emission microscope for inspecting electrical faults in integrated circuits

Kiwa, Toshihiko; Tonouchi, Masayoshi; Yamashita, Minoru; Kawase, Kodo

doi:10.1364/ol.28.002058

Cited by 176 publications

(70 citation statements)

References 12 publications

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“…Following earlier work on integrated circuits [114], Yamashita et al demonstrated in 2008 the used of THz to detect electrical failures in semiconductors. To do so, they found out that p-n junctions can be excited by ultrafast laser pulses and, therefore, generate photocurrents which propagate along the different interconnections and produce THz pulses.…”

Section: Electrical Failures In Semiconductorsmentioning

confidence: 98%

Review of Near-Field Terahertz Measurement Methods and Their Applications

Adam

2011

J Infrared Milli Terahz Waves

198

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In the last decades, many research teams working at Terahertz frequencies focused their efforts on surpassing the diffraction limit. Numerous techniques have been investigated, combining methods existing at optic wavelength with THz system such as Time Domain Spectroscopy. The actual development led on one side to a resolution as high as λ/3000 and one the other side to a video-rate recording. The purpose of this paper is to give an overview of the history of the field, to describe the different approaches, to give examples of existing applications and to draw the perspective for this research area.

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Section: Electrical Failures In Semiconductorsmentioning

confidence: 98%

Review of Near-Field Terahertz Measurement Methods and Their Applications

Adam

2011

J Infrared Milli Terahz Waves

198

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“…148 LTEM has been also used for inspection of semiconductor devices. [149][150][151] Sakai et al 152 have demonstrated laser-induced THz emission from the surface of GaN, which can be used for determination of the defect density and surface potential. They observed that when the GaN surface is excited by ultraviolet femtosecond laser pulses, the THz emission is enhanced by defects related to yellow luminescence (YL).…”

Section: Laser-induced Thz Emission Spectroscopy For Visualization Ofmentioning

confidence: 99%

Review of GaN-based devices for terahertz operation

Ahi

2017

Opt. Eng

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Abstract. GaN provides the highest electron saturation velocity, breakdown voltage, operation temperature, and thus the highest combined frequency-power performance among commonly used semiconductors. The industrial need for compact, economical, high-resolution, and high-power terahertz (THz) imaging and spectroscopy systems are promoting the utilization of GaN for implementing the next generation of THz systems. As it is reviewed, the mentioned characteristics of GaN together with its capabilities of providing high two-dimensional election densities and large longitudinal optical phonon of ∼90 meV make it one of the most promising semiconductor materials for the future of the THz emitters, detectors, mixers, and frequency multiplicators. GaNbased devices have shown capabilities of operation in the upper THz frequency band of 5 to 12 THz with relatively high photon densities in room temperature. As a result, THz imaging and spectroscopy systems with high resolution and deep depth of penetration can be realized through utilizing GaN-based devices. A comprehensive review of the history and the state of the art of GaN-based electronic devices, including plasma heterostructure field-effect transistors, negative differential resistances, hetero-dimensional Schottky diodes, impact avalanche transit times, quantum-cascade lasers, high electron mobility transistors, Gunn diodes, and tera field-effect transistors together with their impact on the future of THz imaging and spectroscopy systems is provided.

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“…We also notice the use of high power sources [77], CW gas laser [78], coherent or incoherent detectors and any combination of all these devices [79]. Moreover, a lot of new techniques have emerged such as polarization imaging [80] dark-field imaging [81], single-pixel imaging [82][83][84] and compressive imaging technique [85], real time imaging [86], time reversal imaging [87], terahertz microscope [88,89] and interferometric imaging [90,91]. This is just to mention that terahertz imaging has given rise to a lot of attention and developments during this last decade.…”

Section: Time Domain Techniquesmentioning

confidence: 99%