Laser synthesis of non-volatile memristor structures based on tantalum oxide thin films

A 5-D memristive hyperchaotic system with extreme multistability and its application in image encryption

“…By combining memristors with other electronic elements, complex chaotic oscillations and nonlinear dynamical behaviors can be achieved, such as coexistence of attractors [8][9][10][11][12][13], offset boosting [5,14,15], and multistability [9,16]. It is precisely due to these remarkable features that memristive chaotic systems have found widespread applications in design, including image encryption [17], secure communications [18,19], novel memory devices [20], and neural network models [21,22].…”

Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al2O3/MgO memristors

“…While the presence of V O is essential for resistive switching behavior, the presence of other defects, many originating from a defective interfacial layer (IL) at the electrode/M2 interface, contributes to leakage current, charge traps, and other deleterious effects that reduce the memristor's endurance, switching speed, and increases its switching energy [12][13][14]. This IL can arise from exposing the electrode to atmosphere during the fabrication process and from nonideal conditions during the deposition process in physical vapor depositions and chemical vapor depositions including atomic layer deposition (ALD) [15][16][17][18][19][20][21]. Among others, ALD has been utilized for the synthesis of metal-oxide based memristors, taking advantage of ALD's conformal coating over a large area and self-limiting deposition for atomic-scale thickness control [22][23][24][25].…”

Surface morphology and X-ray photoelectron spectroscopy of BiFeO3 thin films deposited on top of Ta2O5/Si layers

“…Among those methods are methods of chemical vapour deposition (CVD) group: spray pyrolysis, atomic layer deposition, sol-gel methods; and physical vapour deposition (PVD) group: magnetron sputtering, ion assisted coating technique, thermal evaporation coating etc. [6][7][8]. However due to Ta2O5 specific chemical nature a usage sol-gel ablation method is recommended.…”