Laser structuring of crystalline silicon thin-film solar cells on opaque foreign substrates

Kunz, Thomas; Gazuz, V.; Hessmann, M.T.; Gawehns, N.; Burkert, I.; Brabec, Christoph J.

doi:10.1016/j.solmat.2011.04.031

Cited by 9 publications

(11 citation statements)

References 6 publications

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“…11 The layers were deposited on high purity graphite ("FP479", Schunk Kohlenstofftechnik, Gießen, cf. also Ref.…”

Section: Samples For Investigations Of Polycrystalline Thin-filmsmentioning

confidence: 99%

“…Such systems offer an interesting alternative to the widely used silicon wafer solar cells, because such solar cells can be directly fabricated by large-area deposition, and only a fraction of the usual amount of high purity silicon is necessary. 5 Dopant mapping by Raman is a relatively new method. Therefore, a precise calibration with samples at various wellknown doping levels is necessary.…”

Section: Introductionmentioning

confidence: 99%

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Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Kunz

Hessmann

Seren

et al. 2013

Journal of Applied Physics

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Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective J. Appl. Phys. 112, 123517 (2012) Band bending and determination of band offsets in amorphous/crystalline silicon heterostructures from planar conductance measurements J. Appl. Phys. 112, 123717 (2012) A transition of three to two dimensional Si growth on Ge (100) substrate J. Appl. Phys. 112, 126101 (2012) Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assisted metalinduced layer exchange J. Appl. Phys. 112, 123509 (2012) Additional information on J. Appl. Phys. Micro-Raman spectroscopy has been used to investigate the acceptor distribution in highly p-doped silicon. As an example, the dopant distribution in crystalline thin-film layers, as developed for solar cells, was mapped. The method is based on the analysis of the Fano-type Raman peak shape which is caused by free charge carriers. For calibration of the Raman acceptor measurements (excitation at a wavelength of 532 nm), we used mono-crystalline reference samples whose acceptor concentration was determined by electrochemical capacitance voltage. We find a significant influence of light induced free charge carriers on the peak shape which results from typical Raman excitation. Thus, the selection of a suitable intensity is important to avoid a too low signal-to-noise ratio on the one hand and systematic errors due to light induced carriers on the other hand. Different evaluation methods, i.e., peak asymmetry versus peak width analysis, are compared in respect to interference caused by random noise of the spectra or else by internal stress in the sample. While the width analysis method is more robust to a low signal-to-noise ratio, the symmetry analysis is more reliable in case of high intrinsic stress. V C 2013 American Institute of Physics. [http://dx

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“…11 The layers were deposited on high purity graphite ("FP479", Schunk Kohlenstofftechnik, Gießen, cf. also Ref.…”

Section: Samples For Investigations Of Polycrystalline Thin-filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Kunz

Hessmann

Seren

et al. 2013

Journal of Applied Physics

Self Cite

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“…In previous work, we have reported a best laboratory cell efficiency of 6.8% with the 4 cm 2 aperture area on the graphite substrate [20]. That cell concept is shown in Figure 1a.…”

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confidence: 87%

“…In designing Figure 1c, a multi-crystalline Si-wafer was chosen as a base material for reference purposes, because recrystallized silicon layers on graphite substrates have a similar grain size to typical multi-crystalline Si-wafers. Results from the design of Figure 1a have been described in a previous work [20], while the other two designs are investigated in this work.…”

Section: Solar Cell Design and Processingmentioning

confidence: 99%

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Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation

Wittmann

Kunz

et al. 2015

EPJ Photovolt.

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Laser single side contact formation (LSSC) and the hydrogen passivation process are studied and developed for crystalline silicon thin film (CSiTF) solar cells on graphite substrates. The results demonstrate that these two methods can improve cell performance by increasing the open circuit voltage and fill factor. In comparison with our previous work, we have achieved an increase of 3.4% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area silicon thin film solar cell on graphite substrate. Current density-voltage (J-V ) measurement, quantum efficiency (QE) and light beam induced current (LBiC) are used as characterization methods.

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2D Characterization of OPV from Single and Tandem Cells to Fully Roll‐to‐Roll Processed Modules with and without Electrical Contact

Krebs

Jørgensen

2014

Advanced Optical Materials

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A new type of light beam‐induced current 2D mapping system is developed that speeds up acquisition time from hours and days to minutes or even seconds. It is particularly relevant as a tool to characterize printed, large‐scale, organic photovoltaics. Defects inherent to the multi‐layer printing or degradation effects that develop later can be detected with a spatial resolution of <100 μm. It can be used as an in‐line characterization element in the roll‐to‐roll production of organic photovolatics. Several types of electrical connection schemes are developed, including methods suited for continuous web transport. One particularly exciting development is contactless connection through capacitive coupling, which is especially suited for fast roll‐to‐roll characterization of organic photovoltaic modules during the process where electrodes might not be accessible for making a physical electrical contact. Another variation of the technique allows for the extraction of solar cell parameters such as the capacitive time constant, capacitance, and shunt‐ and series resistance at every position (pixel) in the device, which allows new types of 2D mapping that bring out variations and defects in solar cells that are complementary to standard LBIC. It for instance becomes possible to distinguish a short from an open circuit.

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Laser structuring of crystalline silicon thin-film solar cells on opaque foreign substrates

Cited by 9 publications

References 6 publications

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Recrystallized thin-film silicon solar cell on graphite substrate with laser single side contact and hydrogen passivation

2D Characterization of OPV from Single and Tandem Cells to Fully Roll‐to‐Roll Processed Modules with and without Electrical Contact

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