1989
DOI: 10.1016/0167-577x(89)90122-5
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Laser-stimulated etching of n-GaAs in aqueous solutions

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1997
1997
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“…Holes as small as 10 m in diam and 500 m deep are possible. Laser-or photo-assisted etching has been studied and used for III- [136][137][138][139] ' SiC, 140 and silicon,'41"42 semiconductors as well as in the selective etching of glasses. "'8 III.…”
Section: Extrinsk Etch Stopsmentioning
confidence: 99%
“…Holes as small as 10 m in diam and 500 m deep are possible. Laser-or photo-assisted etching has been studied and used for III- [136][137][138][139] ' SiC, 140 and silicon,'41"42 semiconductors as well as in the selective etching of glasses. "'8 III.…”
Section: Extrinsk Etch Stopsmentioning
confidence: 99%