Laser pulse induced efficient terahertz emission from Co/Al heterostructures

Zhang, Hui; Feng, Zheng; Zhang, Jine; Bai, Hanying; Yang, Huaiwen; Cai, Jianwang; Zhao, Weisheng; Tan, Wei; Hu, Fengxia; Shen, Baogen; Sun, Jirong

doi:10.1103/physrevb.102.024435

Cited by 17 publications

(25 citation statements)

References 41 publications

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“…We show here that GSK3β is activated by Ang II treatment in endothelial cells. This observation is consistent with a previous report by Zhang et al (2017) showing that Ang II treatment activates GSK3β in human primary umbilical endothelial cells. Similarly, blockade of Ang II signaling by a specific angiotensin II receptor antagonist Telmisartan inhibits GSK3β activity in endothelial cells (Song et al, 2017).…”

Section: Discussionsupporting

confidence: 94%

A GSK3-SRF Axis Mediates Angiotensin II Induced Endothelin Transcription in Vascular Endothelial Cells

Yang

Wang

Zhao

et al. 2021

Front. Cell Dev. Biol.

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Endothelin, encoded by ET1, is a vasoactive substance primarily synthesized in vascular endothelial cells (VECs). Elevation of endothelin levels, due to transcriptional hyperactivation, has been observed in a host of cardiovascular diseases. We have previously shown that serum response factor (SRF) is a regulator of ET1 transcription in VECs. Here we report that angiotensin II (Ang II) induced ET1 transcription paralleled activation of glycogen synthase kinase 3 (GSK3) in cultured VECs. GSK3 knockdown or pharmaceutical inhibition attenuated Ang II induced endothelin expression. Of interest, the effect of GSK3 on endothelin transcription relied on the conserved SRF motif within the ET1 promoter. Further analysis revealed that GSK3 interacted with and phosphorylated SRF at serine 224. Phosphorylation of SRF by GSK3 did not influence its recruitment to the ET1 promoter. Instead, GSK3-mediated SRF phosphorylation potentiated its interaction with MRTF-A, a key co-factor for SRF, which helped recruit the chromatin remodeling protein BRG1 to the ET1 promoter resulting in augmented histone H3 acetylation/H3K4 trimethylation. Consistently, over-expression of a constitutively active GSK enhanced Ang II-induced ET1 transcription and knockdown of either MRTF-A or BRG1 abrogated the enhancement of ET1 transcription. In conclusion, our data highlight a previously unrecognized mechanism that contributes to the transcriptional regulation of endothelin. Targeting this GSK3-SRF axis may yield novel approaches in the intervention of cardiovascular diseases.

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Section: Discussionsupporting

confidence: 94%

A GSK3-SRF Axis Mediates Angiotensin II Induced Endothelin Transcription in Vascular Endothelial Cells

Yang

Wang

Zhao

et al. 2021

Front. Cell Dev. Biol.

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“…61 Interestingly, this result agrees with (2), as this relation suggests that the THz electric field amplitude scales with total sample thickness, d tot . 61 Alternatively, the recent work by Zhang et al, 121 which investigates the thickness dependence of Al (d Al nm)/Co (3 nm) and Pt (d Pt nm)/Co (3 nm) based heterostructures, revealed an optimum layer thickness of 4 nm and an optimum Pt layer thickness of 2-3 nm. 121 These results follow the opposite trend for THz pulse amplitude versus layer thickness which was observed in previous work.…”

Section: B Fm/nm Materials Thickness Dependencementioning

confidence: 99%

“…61 Given that the electric field component of THz emission is dominated by j c (induced by ISHE 57,101 ), the sign change in the THz pulse was attributed to the sign change of a H . 57,61 More recently, an investigation of the emission of THz radiation from Al/Co heterostructures by Zhang et al 121 has demonstrated that whilst maximum THz electric field amplitudes have been obtained when using heavy metals with a large-spin orbit coupling for the NM layer, 57,[60][61][62]101 it may be worth revisiting light metals for cost-effective spintronic THz emitters. This is because despite the large difference between the spin-Hall angle of Al and Pt, where a H = 0.03% and 3% (at 4.2 K) respectively, 61 a result of the ISHE, the physical origin was not clear, demonstrating the need for further experiments to uncover the underlying physics.…”

Section: A Optimization Of Fm/nm Bilayer Materialsmentioning

confidence: 99%

“…This is because despite the large difference between the spin-Hall angle of Al and Pt, where a H = 0.03% and 3% (at 4.2 K) respectively, 61 a result of the ISHE, the physical origin was not clear, demonstrating the need for further experiments to uncover the underlying physics. 121 One possibility for the unexpected range of THz electric field amplitudes emitted from varying NM materials could relate to the choice of FM material used for the heterostructure. The THz pulse amplitudes emitted from FM/NM heterostructures have been studied for a range of FM materials, including Fe, Co, Ni and their binary alloys.…”

Section: A Optimization Of Fm/nm Bilayer Materialsmentioning

confidence: 99%

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Spintronic terahertz emitters: Status and prospects from a materials perspective

Bull

Hewett

et al. 2021

APL Materials

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Spintronic terahertz (THz) emitters, consisting of ferromagnetic (FM)/non-magnetic (NM) thin films, have demonstrated remarkable potential for use in THz time-domain spectroscopy and its exploitation in scientific and industrial applications. Since the discovery that novel FM/NM heterostructures can be utilized as sources of THz radiation, researchers have endeavored to find the optimum combination of materials to produce idealized spintronic emitters capable of generating pulses of THz radiation over a large spectral bandwidth. In the last decade, researchers have investigated the influence of a wide range of material properties, including the choice of materials and thicknesses of the layers, the quality of the FM/NM interface, and the stack geometry upon the emission of THz radiation. It has been found that particular combinations of these properties have greatly improved the amplitude and bandwidth of the emitted THz pulse. Significantly, studying the material properties of spintronic THz emitters has increased the understanding of the spin-to-charge current conversion processes involved in the generation of THz radiation. Ultimately, this has facilitated the development of spintronic heterostructures that can emit THz radiation without the application of an external magnetic field. In this review, we present a comprehensive overview of the experimental and theoretical findings that have led to the development of spintronic THz emitters, which hold promise for use in a wide range of THz applications. We summarize the current understanding of the mechanisms that contribute to the emission of THz radiation from the spintronic heterostructures and explore how the material properties contribute to the emission process.

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“…MgO(111)/Pt(1.5 nm)/IrMn(6 nm)/Cu(0.4 nm)/Fe(2 nm)/Pt(1.8 nm)在外磁场为 0 时的太赫兹电场波形图，可以看出在零场下测量到了非常可观的太赫兹信号.为了能够定量表示样品的太赫兹发射强度，将峰-峰间的强度差定义为太赫兹脉冲振幅 [17] . 图 2 (b) 给出了样品的太赫兹脉冲振幅随着外磁场的变化的曲线，基本和具有交换偏置 Fe 的磁化翻转行为一致，并且其太赫兹振幅的正向饱和场为-10 mT,远大于地磁场，符合真正的无场应用的标准.根据自旋太赫兹波的发射…”

Section: 实验结果与讨论unclassified

Field-free spintronic terahertz emitters based on IrMn/Fe/Pt exchage bias heterostructures

中科院物理所¹,

中国工程物理研究院电子工程研究所²,

中国科学院物理研究所磁学国家重点实验室³

2021

Acta Physica Sinica

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Laser pulse induced efficient terahertz emission from Co/Al heterostructures

Cited by 17 publications

References 41 publications

A GSK3-SRF Axis Mediates Angiotensin II Induced Endothelin Transcription in Vascular Endothelial Cells

A GSK3-SRF Axis Mediates Angiotensin II Induced Endothelin Transcription in Vascular Endothelial Cells

Spintronic terahertz emitters: Status and prospects from a materials perspective

Field-free spintronic terahertz emitters based on IrMn/Fe/Pt exchage bias heterostructures

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