Laser propulsion of microelectronic components: releasing mechanism investigation

Abstract

Laser propulsion has gained increasing attention in the recent years. Ultra-high average power laser systems have emerged and found applications in launching satellites to the space. The impulse generated by ablation can also be used to move small parts. This article describes laser-induced releasing of microelectronic components from its carrier material. The releasing mechanisms can be divided in: ablative and thermal releasing, depending from polymers, which are used as the component's carrier material and whether low or high laser fluence is used. The directional variation and speed variations under different operating conditions were studied and presented. Application of this technique as a fast microelectronics components assembly method is demonstrated.

Laser‐Induced Forward Transfer: Fundamentals and Applications

“…A few years later, this concept was applied to the laser transfer of semiconductor bare dies by a group from the University of Twente in the Netherlands. In their publications, Karlitskaya and coworkers described a simple model to estimate the rise in temperature as a function of laser fluence during the release of 150 µm thick Si dies 200 × 200 µm 2 in size held with a polyvinyl chloride (PVC) sacrificial layer . At this thickness, the model showed that the laser‐driven die release would take place below the thermal damage threshold for the reverse side of the die (<673 K), based on heat diffusion of the absorbed laser pulse through the Si substrate.…”

Femtosecond laser-induced forward transfer of thin layers studied by time-resolved shadowgraphy

“…During ns-LIFT with the use of an auxiliary absorption layer (dynamic release layer or DRL), flyers with thickness comparable to those reported here were transferred with a similar fluence but at a higher ejection velocity [4]. In another work, where the author used a modified LIFT technique for the transfer of electronic dies from a support substrate, transfer velocities were found to be as low as ~0.1 -10m/s with thicker flyers than used here [5]. Another fs-LIFT experiment [2] reports a velocity of ~50m/s for ejected species of a 40nm donor layer.…”

Advances in laser-assisted mass transfer of MicroLED

“…Karlitskaya 等人 [70] 成功转移了尺寸为 300 ×300 µm 的 硅片, 在接收间距为 195 µm 下转移后的硅片 95％的 旋转角度在 9°误差范围内； Miller 等人 [35] [72] 和高速拍摄观测 [ 73] , 该方式是 揭示 LIFT 机制的本质和有效观测芯片转移复杂过程 的重要实验手段. 2013 年, Uniqarta 在 LIFT 技术的基 础上, 引入了大规模并行激光使能传输 (MPLET)技 术 [74] [75] , 因此这种转移技术需要不断更换响应层.…”