Laser-plasma X-ray detection by using fast 4H-SiC interdigit and ion collector detectors

Torrisi, L.; Sciuto, Antonella; Calcagno, L.; Musumeci, Paolo; Mazzillo, M.; Ceccio, G.; Cannavó, Antonino

doi:10.1088/1748-0221/10/07/p07009

Cited by 23 publications

(9 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All these properties make SiC an ideal material for high-power and high-frequency devices and, more generally, for the fabrication of harsh-environment electronics [ 2 , 3 ]. Other properties such as biocompatibility, visible blindness, and radiation hardness make this material attractive for alternative applications, such as biomedical sensors, as well as for UV and X-ray functions, charged particle detectors [ 4 , 5 , 6 , 7 ], and also for uses involving visible radiation presences, such as plasma environments [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

et al. 2021

View full text Add to dashboard Cite

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (£1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

show abstract

Section: Introductionmentioning

confidence: 99%

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

et al. 2021

View full text Add to dashboard Cite

show abstract

“…At room temperature, the reverse current is about 2 pA at 10-V reverse bias, more than two orders of magnitude lower with respect to silicon Schottky diodes, permitting to obtain high detection sensitivity [11], [18].…”

Section: Methodsmentioning

confidence: 99%

“…The plasma monitoring generally uses ion collectors (ICs), ion energy analyzers (IEAs), Langmuir probes (LPs), and optical spectroscopy (OS). These permit to measure the ion current, the ion charge state distribution, the plasma temperature, and density and their evolution with the time [11], [12], [13], [14].…”

Section: Introductionmentioning

confidence: 99%

Optimization for Ion Detection and Recognition From Laser-Generated Plasma Using SiC Detectors Connected in Time-of-Flight Acquisition

Torrisi

2023

IEEE Trans. Plasma Sci.

View full text Add to dashboard Cite

A silicon carbide (SiC) Schottky diode detector is employed to monitor the ion streams emitted from lasergenerated plasmas and to obtain information on their kinetic energy using time-of-flight (TOF) measurements. The laser operates with nanosecond (ns) pulses, in the IR region at 1064-nm wavelength, uses single pulses with 200-mJ energy, and an intensity of about 10 10 W/cm 2 . Plasmas are produced in a high vacuum by irradiation different targets as polymers, ceramics, and metals. The non equilibrium plasma, back emitted orthogonally to the target surface, accelerates ions at about 110 eV per charge state and has a temperature within 70 and 100 eV growing with the atomic number of the laser irradiated target. In this article, an optimization of ion detection is checked for SiC detectors through the TOF spectra, permitting the ion recognition and angular emission. A comparison with classical ion collectors (ICs) is also presented and discussed.

show abstract

“…Other properties such as the transparency to visible light, the UV-photons absorption, the radiation hardness, and the biocompatibility make this material attractive for alternative applications, for instance, biomedical sensors and X-ray, UV, and charged particles detectors [ 4 , 5 , 6 , 7 ]. Applications involve visible light and hostile environment such as, for example, the monitoring of laser generated plasma or of flames in industrial apparatus found large prominence [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector

et al. 2021

View full text Add to dashboard Cite

4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He+ in the fluence range of 5 × 1011 ÷ 5 × 1014 ion/cm2 in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (200 ÷ 400 nm) range, as well as in the visible region confirming the typical visible blindness of unirradiated and irradiated SiC photo-sensors. A decrease of UV optical responsivity occurred after irradiation and two fluence regimes were identified. At low fluence (<1013 ions/cm2), a considerable reduction of optical responsivity (of about 50%) was measured despite the absence of relevant dark current changes. The presence of irradiation induced point defects and then the reduction of photo-generated charge lifetime are responsible for a reduction of the charge collection efficiency and then of the relevant optical response reduction: point defects act as recombination centers for the photo-generated charges, which recombine during the drift/diffusion toward the electrodes. At higher irradiation fluence, the optical responsivity is strongly reduced due to the formation of complex defects. The threshold between low and high fluence is about 100 kGy, confirming the radiation hardness of SiC photo-sensors.

show abstract

Laser-plasma X-ray detection by using fast 4H-SiC interdigit and ion collector detectors

Cited by 23 publications

References 18 publications

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Optimization for Ion Detection and Recognition From Laser-Generated Plasma Using SiC Detectors Connected in Time-of-Flight Acquisition

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector

Contact Info

Product

Resources

About