Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

Ch, Ramesh; Tyagi, Prashant; Bhattacharyya, Biplab; Husale, Sudhir; Maurya, K. K.; Kumar, M. Senthil; Kushvaha, S. S.

doi:10.1016/j.jallcom.2018.08.149

Cited by 41 publications

(20 citation statements)

References 56 publications

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“…Meanwhile, MoO 3 owns bandgap nearly 2.7 eV, several times larger than Bi 2 Se 3 , leading to low carrier concentration and thus reducing the I dark of devices, which makes it appropriate to combine with TIs to fabricate inorganic heterojunction devices. In addition, there are new and very simple methods for making heterostructures, which provide ideas for experiments …”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Yang

Han

Liu

et al. 2020

Adv Funct Materials

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Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi2Se3 is considered a promising candidate toward high‐performance IR applications. Nevertheless, the IR devices based on Bi2Se3 thin films are rarely reported. Here, a 3D TI Bi2Se3/MoO3 thin film heterojunction photodetector is shown that possesses ultrahigh responsivity (Ri), external quantum efficiency (EQE), and detectivity (D*) in the broadband spectrum (405–1550 nm). The highest on–off ratio of the optimized device can reach up to 5.32 × 104. Ri, D*, and the EQE can reach 1.6 × 104 A W−1, 5.79 × 1011 cm2 Hz1/2 W−1, and 4.9 × 104% (@ 405 nm), respectively. Surprisingly, the Ri can achieve 2.61 × 103 A W−1 at an optical communication wavelength (@ 1310 nm) with a fast response time (63 µs), which is two orders of magnitude faster than that of other TIs‐based devices. In addition, the device demonstrates brilliant long‐term (>100 days) environmental stability under environmental conditions without any protective measures. Excellent device photoelectric properties illustrate that the 3D TI/inorganic heterojunction is an appropriate way for manufacturing high‐performance photodetectors in the optical communication, military, and imaging fields.

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Section: Introductionmentioning

confidence: 99%

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Yang

Han

Liu

et al. 2020

Adv Funct Materials

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“…Under such circumstances, a viable solution for enhancing D * can be obtained by maximizing the value of responsivity via a controlled passivation of surface states in the GaN layer, as shown in Figure a. In Figure b, recently reported values of D * for several state‐of‐the‐art visible blind GaN UV PDs are plotted as a function of dark current along with our results. Note that the value of D * measured for sample B is higher or comparable to the values reported in the literature irrespective of its large dark current.…”

Section: A Summary Of Schottky Junction Parameters Estimated Using Thmentioning

confidence: 59%

“…Another important figure of merit of PDs is the specific detectivity ( D *), which corresponds to their ability to detect the weakest signal. Recently, a few methods have been proposed by researchers for enhancing the value of D *, which is actually estimated by following the procedure given by Gong et al. To compare the values of D * of our devices with the recently reported state‐of‐the‐art values, we also followed the same procedure, and the estimated values of D * are plotted in Figure a.…”

Section: A Summary Of Schottky Junction Parameters Estimated Using Thmentioning

confidence: 98%

Role of ZrO₂ Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors

Chatterjee

Khamari

Porwal

et al. 2019

Physica Rapid Research Ltrs

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The importance of a ZrO2 passivation layer in the fabrication of high‐responsivity GaN‐based ultraviolet (UV) photodetectors (PDs) is discussed. It is found that an optimum thickness of the ZrO2 layer exists, which plays a critical role in controlling the photoresponse and transient response of the device. Beyond the optimal thickness, the performance of PDs deteriorates, which is limited by the restricted tunneling of photogenerated carriers across the oxide layer. At an optimum ZrO2 thickness of 3 nm, a spectral responsivity of 27 A W−1 at 361 nm is achieved at 4 V applied bias along with the fast response of the device with a rise (fall) time of 28 ms (178 ms), respectively. Such characteristics are found to be similar or better than the recently reported state‐of‐the‐art values for visible blind metal–semiconductor–metal PDs fabricated on GaN. The results confirm that the surface passivation with an optimal thickness of an oxide layer can be used to develop high‐responsivity GaN‐based UV PDs irrespective of having a large dark current, which is often inevitable due to the presence of a large density of dislocations in GaN epitaxial layers grown on foreign substrates.

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“…Ultraviolet (UV) detection is essential in various technical fields including applications in flame sensing, environmental monitoring, and spatial optical communications [1,2,3,4]. To date, various UV photodetectors (PDs) using different structures, such as Schottky junctions [5,6], metal–semiconductor–metal sandwich structures [7,8], p–n junctions [9,10,11], and photoelectrochemical cells [12,13,14], have been proposed. Among these structures, p–n heterojunctions are the most effective because of the improved separation efficiency of photoexcited electron–hole pairs by the built-in electric field (BEF) [15,16,17].…”

Section: Introductionmentioning

confidence: 99%

“…Although many impressive GaN-based devices have been constructed [28,29,30], the performance of available GaN-based UV PDs is still unsuitable for real applications due to their low photo detectivity and quantum efficiency, resulting from low light absorption and the quick recombination of photo-generated electron–hole pairs [31]. Fabricating nanoporous GaN (porous-GaN) is a promising approach to improve the light absorption by providing large specific surface area from nanopores [9,32,33,34]. These unique porous structures can also serve as photo traps to increase light absorptivity.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

Xiao

Liu

et al. 2019

Nanomaterials

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Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p–n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm−2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.

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Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

Cited by 41 publications

References 56 publications

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Role of ZrO₂ Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

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Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

Cited by 41 publications

References 56 publications

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Role of ZrO2 Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p–n Vertical Heterojunction

Contact Info

Product

Resources

About

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Ultrahigh Stability 3D TI Bi₂Se₃/MoO₃ Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband

Role of ZrO₂ Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors