Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser
Lutz Deriks,
Eldad Bahat Treidel,
Elisabeth Brandl
et al.
Abstract:GaN-based wide bandgap transistors offer several advantages compared to silicon-based counterparts. These transistors are effective in reducing power conversion losses and find applications in various sectors, including power supplies in data centers and traction inverters for electric vehicles and other components empowering the renewable energy transformation.To fully harness the potential of GaN-based transistors, quick and reliable detachment from the growth (typically sapphire) substrate is essential. Sep… Show more
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