Laser ionization mass spectrometry measurements of arsenic sticking and incorporation during GaAs(1 0 0) homoepitaxy

Ott, Adina K.; Casey, Sean M.; Leone, Stephen R.

doi:10.1016/s0022-0248(97)00295-9

Cited by 3 publications

(4 citation statements)

References 21 publications

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“…For instance, in the present study, using a different growth temperature will require recalibration of the growth rate under excess of In and As at that temperature, followed by fitting the experimental data using the model with updated values for the diffusion lengths, the Kelvin radius, etc. Such studies under broad growth conditions, analyzed with the present approach and with the support of theory, are still needed to clearly assess the temperature dependence of the Kelvin effect, the nucleation, the sticking coefficients of the individual constituents, and so on and to evaluate the thermal stability of such nanostructures.…”

Section: Discussionmentioning

confidence: 99%

“…Description of the indium and arsenic adatom flux calibration, additional sample descriptions, and supplemental figures for the model, as well as refs and (PDF)…”

mentioning

confidence: 99%

“…The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.cgd.4c00186. Description of the indium and arsenic adatom flux calibration, additional sample descriptions, and supplemental figures for the model, as well as refs and (PDF) …”

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confidence: 99%

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Dual-Adatom Diffusion-Limited Growth Model for Compound Nanowires: Application to InAs Nanowires

Mosiiets,

Genuist,

Cibert

et al. 2024

Crystal Growth & Design

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We present a dual-adatom diffusion-limited model to investigate the growth mechanisms of compound semiconductor nanowires, specifically via the vapor−liquid−solid or vapor−solid−solid routes. The experimental validation of the model is achieved through the growth of InAs nanowires catalyzed by a gold nanoparticle in a molecular beam epitaxy reactor. Initially, we derive essential parameters, diffusion lengths, flux to the seed, and Kelvin effect that characterize nanowire growth under an excess of one of the two beams, e.g., group III or group V atoms. We then calculate the instantaneous growth rate set by the minority current among the two types of atoms. Our model is applied to analyze the length−radius dependence of InAs nanowires, as measured by scanning electron microscopy, covering experimental growth conditions ranging from the As-limited to the In-limited regime. We find that the model successfully describes intricate transitions between the minority currents during elongation of the nanowires. This demonstrates that the notion of excess of flux, commonly applied to the growth of compound semiconductors, cannot be universally used on nano-objects like nanowires. Importantly, our approach is generic and can be broadly applied to study the growth of various compound semiconductor nanowires.

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Section: Discussionmentioning

confidence: 99%

“…Description of the indium and arsenic adatom flux calibration, additional sample descriptions, and supplemental figures for the model, as well as refs and (PDF)…”

mentioning

confidence: 99%

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Dual-Adatom Diffusion-Limited Growth Model for Compound Nanowires: Application to InAs Nanowires

Mosiiets,

Genuist,

Cibert

et al. 2024

Crystal Growth & Design

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“…I never figured out why there is this big difference when I step into the office or the lab, but, gratefully, it led me to investigate many new fields every decade of my career. The subjects spanned from infrared fluorescence kinetics of energy transfer (2); to laser isotope separation (Figure 2) (3); product-state-resolved ion-molecule chemistry via infrared vibrational fluorescence (4); Fourier transform infrared emission spectroscopy and dynamics (5); alignment-dependent electronic energy transfer (6); surface etching, deposition, and growth; nearfield microscopy of photoresists (7)(8)(9); femtosecond coherent superpositions and coherent control (10,11); synchrotron beamline investigations of aerosols (12); and low-temperature chemistry of Titan (13); among many, many topics in my early years.…”

Section: Adaptabilitymentioning

confidence: 99%

Reinvented: An Attosecond Chemist

Leone

2024

Annual Review of Physical Chemistry

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Attosecond science requires a substantial rethinking of how to make measurements on very short timescales; how to acquire the necessary equipment, technology, and personnel; and how to build a set of laboratories for such experiments. This entails a rejuvenation of the author in many respects, in the laboratory itself, with regard to students and postdocs, and in generating funding for research. It also brings up questions of what it means to do attosecond science, and the discovery of the power of X-ray spectroscopy itself, which complements the short timescales addressed. The lessons learned, expressed in the meanderings of this autobiographical article, may be of benefit to others who try to reinvent themselves. Expected final online publication date for the Annual Review of Physical Chemistry, Volume 75 is April 2024. Please see http://www.annualreviews.org/page/journal/pubdates for revised estimates.

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