Laser-interfered studies in HgCdTe infrared focal plane array detector by high-repetition-rate mid-infrared supercontinuum fiber laser

Wang, Kaixuan; Yao, Chuanfei; Wu, Yongjing; Wang, Xuan; Wang, Yunpeng; Li, Pingxue

doi:10.1016/j.optlastec.2023.109433

Optics & Laser Technology

2023

DOI: 10.1016/j.optlastec.2023.109433

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Laser-interfered studies in HgCdTe infrared focal plane array detector by high-repetition-rate mid-infrared supercontinuum fiber laser

Kaixuan Wang¹,

Chuanfei Yao²,

Yongjing Wu³

et al.

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Cited by 3 publications

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Numerical simulation of high-power density CO2 laser ablation of HgCdTe

Gao,

Wang,

Chang

et al. 2025

Optics & Laser Technology

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Numerical simulation of high-power density CO2 laser ablation of HgCdTe

Gao,

Wang,

Chang

et al. 2025

Optics & Laser Technology

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Pulsed Laser-Bleaching Semiconductor and Photodetector

Huang,

Chen,

Zhang

et al. 2024

Sensors

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Pulsed lasers alter the optical properties of semiconductors and affect the photoelectric function of the photodetectors significantly, resulting in transient changes known as bleaching. Bleaching has a profound impact on the control and interference of photodetector applications. Experiments using pump–probe techniques have made significant contributions to understanding ultrafast carrier dynamics. However, there are few theoretical studies to the best of our knowledge. Here, carrier dynamic models for semiconductors and photodetectors are established, respectively, employing the rectified carrier drift-diffusion model. The pulsed laser bleaching effect on seven types of semiconductors and photodetectors from visible to long-wave infrared is demonstrated. Additionally, a continuous bleaching method is provided, and the finite-difference time-domain (FDTD) method is used to solve carrier dynamic theory models. Laser parameters for continuous bleaching of semiconductors and photodetectors are calculated. The proposed bleaching model and achieved laser parameters for continuous bleaching are essential for several applications using semiconductor devices, such as infrared detection, biological imaging, and sensing.

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Laser-Induced Interference to Infrared Detector Using Continuous Wave and Short-Pulse Lasers

Ma,

Zhou,

Chang

et al. 2024

Sensors

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The response of a DPbS3200 infrared detector irradiated by a nanosecond pulsed laser and CW laser has been investigated to study laser-induced interference. A laser interference experiment system was constructed to measure the time-varying response signal. A nanosecond pulsed laser and a CW laser of 10 Hz were used, with a 1064 nm wavelength and a millimeter-scale irradiation spot diameter. Firstly, the characteristics of transient interference signals induced by pulsed lasers were analyzed. Then, the characteristics of response signal interference by both CW laser and pulsed laser irradiation were further investigated. The results showed that the pulsed laser only produced transient interference. However, the CW laser led to a significant amplitude reduction of the response signal, which could continuously interfere in the operating time. For transient interferences, the amplitude of the interference signal increased linearly with the laser fluence. The relation between the pulse repetition rate of the incident laser and the operating frequency of the detector determined the numbers of transient interference signals in one response period; for the interference induced by both the CW laser and pulsed laser, CW laser interference played a leading role when CW laser power density increased to 4.1 W/cm2 or more. As the CW laser fluence reached 6.1 W/cm2, the PbS infrared detector was no longer able to detect any signal, which caused temporary blindness. In the end, a probit model was used to determine the interference threshold.

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Laser-interfered studies in HgCdTe infrared focal plane array detector by high-repetition-rate mid-infrared supercontinuum fiber laser

Cited by 3 publications

References 20 publications

Numerical simulation of high-power density CO2 laser ablation of HgCdTe

Numerical simulation of high-power density CO2 laser ablation of HgCdTe

Pulsed Laser-Bleaching Semiconductor and Photodetector

Laser-Induced Interference to Infrared Detector Using Continuous Wave and Short-Pulse Lasers

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