1992
DOI: 10.1016/0026-2692(92)90023-t
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Laser interconnection techniques for defect avoidance in large-area restructurable silicon systems

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“…For this an extemal laser system makes physical, low resistance connections in the substrate between two metal bus lines, and also can cut the bus paths. The fully CMOS compatible structure, the laser diffused link[2] [7] consists of two lines of conductively doped silicon separated by a gap of 2 microns in CMOS 1.5 micron processes (see Figures 2, 3).…”
Section: Laser Post Processing Defect Avoidancementioning
confidence: 99%
“…For this an extemal laser system makes physical, low resistance connections in the substrate between two metal bus lines, and also can cut the bus paths. The fully CMOS compatible structure, the laser diffused link[2] [7] consists of two lines of conductively doped silicon separated by a gap of 2 microns in CMOS 1.5 micron processes (see Figures 2, 3).…”
Section: Laser Post Processing Defect Avoidancementioning
confidence: 99%