Laser induced ultrafast combustion synthesis of solution-based AlO<sub>x</sub> for thin film transistors

Carlos, Emanuel; Dellis, Spilios; Kalfagiannis, N.; Κουτσοκέρας, Λουκάς; Koutsogeorgis, Demosthenes C.; Branquinho, Rita; Martins, Rodrigo; Fortunato, Elvira

doi:10.1039/d0tc01204a

Cited by 25 publications

(25 citation statements)

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“…[85][86][87][88] In addition to the conventional sol-gel method, there is solution combustion synthesis (SCS), a simple, efficient, and versatile method that has been used for a wide range of applications, particularly for TFTs. [89][90][91][92][93][94][95][96] SCS involves a self-sustained redox reaction initiated by a source of energy between a fuel and an oxidant in the presence of metal cations, requiring less energy to form the metal oxide thin films, as depicted in Figure 9b. The fuel is the crucial component present in SCS and is mainly composed by organics containing carbon and hydrogen that facilitate the liberation of heat by the formation of CO 2 and H 2 O during the combustion process.…”

Section: Synthesis Methodsmentioning

confidence: 99%

“…To overcome this issue, UV photochemical techniques have been explored as a viable option due to their compatibility with printed electronic industry, offering high quality materials at a reduced associated cost and process time. [96,230] Yang and coworkers studied the use of a UV-based (KrF, 248 nm) excimer laser annealing to produce solution-based NiO thin films and their application in RRAMs. [229] Specific areas of these films were exposed to the laser irradiation for only 3 min, resulting in the production NiO RRAMs with a resistance window of 10 3 , as shown in Figure 13b.…”

Section: Thermal and Irradiation Annealing Treatment For Film Conversionmentioning

confidence: 99%

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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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Section: Synthesis Methodsmentioning

confidence: 99%

Section: Thermal and Irradiation Annealing Treatment For Film Conversionmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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“…[211] Recent work by Fortunato et al introduced excimer laser annealing (ELA) to the combustion synthesis of AlO x dielectric layers, enabling fast film's densification (≤ 15 min) and significantly enhanced performances. [212] Figure 17. a) Typical flexible plastic substrates and their glass transition temperatures.…”

Section: Combustion Processesmentioning

confidence: 99%

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

et al. 2021

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over 80% in the visible light range. [2] ITO is widely used as essential transparent conducting electrodes in flat panel displays, touch screens, and solar cells. The global ITO market has an annual growth rate of 15% and is valued at 7 billion USD in 2019. In 2004, Nomura and Hosono et al. made great breakthrough in oxide thin film transistor (TFT) based on amorphous indium gallium zinc oxide (IGZO) grown at room temperature. [3] The amorphous IGZO showed an impressive mobility of 9 cm 2 V −1 s −1 , about 10 times of amorphous hydrogenated Si TFT which was used exclusively for displays at that time. Soon after Hosono's seminal work, IGZO TFT was commercialized by Sharp Corporation in 2012, and then rapidly expanded to mobile phones, tablets and laptops. [4] In 2019, the fifth generation IGZO TFT went to mass production, capable of driving large-area displays (85 in.) with ultrahigh 8 K resolution. [5] Moreover, oxide TFTs are also considered as the most promising transistors for next-generation curved, flexible, or even rollable electronics. [6] The great success of oxide semiconductors is underpinned by their unique electronic structure, amenability for n-type doping, as well as intrinsic stability. Oxide semiconductors have bandgap larger than 3 eV, enabling transparency in the visible spectrum. The conduction band (CB) of oxide semiconductors is typically composed of empty ns-orbitals (n ≥ 4) of heavy posttransition metals. The large, spherical ns-orbitals give rise to a high electron mobility even in amorphous phases, as well as high dopability for hosting a high density of electrons. Therefore, oxide semiconductors are amendable via doping to be a transparent semiconductor or a transparent conductor, depending on the purposes of device applications, e.g., TFT or ITO. However, there are two sides to every coin. The nature of electronic structure of oxide semiconductors also leads to the fundamental limitation of achieving p-type oxide semiconductors, which is exacerbated by the presence of a high background electron density arising from the formation of unintentional defects and impurities. [1a,7] The lack of p-type semiconductor significantly limits the great potential of oxide electronics. [7b] A high electron density and defect states cause detrimental effects on oxide TFT device performance, such as a high off-current, lower mobility, and instability issues. [8] In the past two decades, considerable research efforts have been made to understand the microscopic origin of defect states and background electrons Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new...

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“…In this study, sputtered indium gallium tin oxide (IGTO) TFTs with an atomic layer deposition (ALD)-derived aluminum oxide (Al 2 O 3 ) dielectric fabricated at a low processing temperature of 150 °C were evaluated. The suitability of Al 2 O 3 film as the gate dielectric for oxide TFTs has been reported in various deposition methodologies. , In this regard, we chose an ALD-derived Al 2 O 3 dielectric as a gate insulator because it has not only a high k value but also excellent interfacial characteristics and a wide bandgap, enabling large breakdown of the electric field. To address the present bottleneck for real flexible electronics, it is important to design the semiconducting oxide channel with a proper cation composition, which simultaneously satisfies a high mobility and low-temperature activation capability.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Indium Gallium Tin Oxide Transistors with an Al₂O₃ Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al₂O₃ Dielectric Film

Choi

Kim

Ueda

et al. 2021

ACS Appl. Mater. Interfaces

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In this work, high-performance amorphous In0.75Ga0.23Sn0.02O (a-IGTO) transistors with an atomic layer-deposited Al2O3 dielectric layer were fabricated at a maximum processing temperature of 150 °C. Hydrogen (H) and excess oxygen (Oi) in the Al2O3 film, which was controlled by adjusting the oxygen radical density (PO2: flow rate of O2/[Ar+O2]) in the radio-frequency (rf) plasma during ALD growth of Al2O3, significantly affected the performance and stability of the resulting IGTO transistors. The concentrations of H and Oi in Al2O3/IGTO stacks according to PO2 were characterized by secondary ion mass spectroscopy, X-ray photoelectron spectroscopy, hard X-ray photoemission spectroscopy, and thermal desorption spectroscopy. The high concentration of H at a low PO2 of 2.5% caused heavy electron doping in the underlying IGTO during thermal annealing at 150 °C, leading to a conductive behavior in the resulting transistor without modulation capability. In contrast, a high PO2 condition of 20% introduced O2 molecules (or Oi) into the Al2O3 film, which negatively impacted the carrier mobility and caused anomalous photo-bias instability in the IGTO transistor. Through in-depth understanding of how to manipulate H and Oi in Al2O3 by controlling the PO2, we fabricated high-performance IGTO transistors with a high field-effect mobility (μFE) of 58.8 cm2/Vs, subthreshold gate swing (SS) of 0.12 V/decade, threshold voltage (V TH) of 0.5 V, and I ON/OFF ratio of ∼109 even at the maximum processing temperature of 150 °C. Simultaneously, the optimized devices were resistant to exposure to external positive gate bias stress (PBS) and negative bias stress (NBS) for 3600 s, where the V TH shifts for exposure to PBS and NBS for this duration were 0.1 V and −0.15 V, respectively.

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Laser induced ultrafast combustion synthesis of solution-based AlO_x for thin film transistors

Abstract: Excimer laser annealing (ELA) combined with combustion synthesis leads to high quality metal oxide TFTs in a short processing time.

Cited by 25 publications

References 50 publications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

High-Performance Indium Gallium Tin Oxide Transistors with an Al₂O₃ Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al₂O₃ Dielectric Film

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Laser induced ultrafast combustion synthesis of solution-based AlOx for thin film transistors

Abstract: Excimer laser annealing (ELA) combined with combustion synthesis leads to high quality metal oxide TFTs in a short processing time.

Cited by 25 publications

References 50 publications

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film

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Product

Resources

About

Laser induced ultrafast combustion synthesis of solution-based AlO_x for thin film transistors

High-Performance Indium Gallium Tin Oxide Transistors with an Al₂O₃ Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al₂O₃ Dielectric Film