Laser induced Te diffusion in amorphous As50Se50 thin films probed by FTIR and XPS

Behera, Mukta; Panda, Rozalin; Naik, Ramakanta

doi:10.1007/s12648-016-0954-2

Cited by 11 publications

(5 citation statements)

References 38 publications

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“…There was only one obvious peak for Se 3d, and its binding energy position was about 54.56 eV, which was Se 4+ . The peak positions of the four elements, Cu, O, Se, and Te were basically consistent with those previously reported in the literature 10,[22][23][24]. Fig.6shows the EDS spectra of the Te : Cu2 O and Se/Te : Cu 2 O thin lms.…”

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confidence: 88%

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Study of Se/Te-doped Cu₂O as a hole transport material in perovskite solar cells

et al. 2023

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confidence: 88%

“…The peak positions of the four elements, Cu, O, Se, and Te were basically consistent with those previously reported in the literature. 10,[22][23][24] Fig. 6 shows the EDS spectra of the Te : Cu Fig.…”

Section: Resultsmentioning

confidence: 99%

Study of Se/Te-doped Cu₂O as a hole transport material in perovskite solar cells

et al. 2023

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“…With the increasing concerns and demands nowadays, improvements are needed to achieve the most resonant characteristics for device applications. So many studies have concentrated on the effect of external energy input such as doping of foreign elements 7 , thermal annealing 8 , laser irradiation 9 , ion irradiation 10 , etc. on the properties of the films.…”

Section: Introductionmentioning

confidence: 99%

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

Sci Rep

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The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BixIn35-xSe65 (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new Bi2Se3 phases developed upon annealing at 450 °C. The phase transformation induced change increased the linear and nonlinear properties with great extent as seen from the UV–visible optical studies. The direct and indirect optical bandgaps decreased with annealing temperature and also with Bi % content due to the formation of surface dangling bonds near the crystallite sites. The static linear refractive index and high-frequency dielectric constants were increased with annealing. The third-order non-linear susceptibility and non-linear refractive index were found to be greatly influenced by annealing temperature and increased with bismuth content. The FESEM micrographs also showed the phase transformation and EDX analysis showed the composition. The results obtained from the materials showed the potentiality to be useful for photovoltaic and optoelectronic applications.

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“…This behavior satisfies the Moss rule 51 which defines E g n 4 ≈ const, that is, the refractive index increases with the decrease in optical bandgap which is observed in the studied films like other studies. 52,53 Similarly, the high-frequency dielectric constant was also increased with Bi concentration (Table 2).…”

Section: Extinction Coefficient (K) Linear Static Refractive Index (N 0 ) and Real Dielectric Constant ( L )mentioning

confidence: 84%

“…From Figure 5, it was observed that with the decrease in the bandgap, the non-linear susceptibility increased as like other studies. 53,54 The high value of χ (3) infers the high absorption power of the films and thus becomes promising material for optical switching and other applications. 57 Explanation with more reliably on these non-linear properties has been done through the Kerr effect which describes the variation of refractive index (Δn) with respect to the intensity (I).…”

Section: Non-linear Optical Parametersmentioning

confidence: 99%

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

Priyadarshini¹,

Das²,

Alagarasan

et al. 2021

J. Am. Ceram. Soc.

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The alloying of chalcogen elements with other group members form very effective and dynamic optical systems which are used in optoelectronics, photonic materials, phase change materials, and light communication purposes. [1][2][3] The unique nature of such materials is that their properties can be easily tuned by varying the composition, 4 thermal annealing, 5 photoinduced diffusion, 6 ion irradiation, 7 laser irradiation, 8 and many other techniques. The structural flexibility due to the available lone pair electrons makes it easy for such kind of changes which brings high transparency, low phonon energy, high linear, and non-linear refractive indices, and thirdorder non-linear susceptibility. 9 The addition of the third element into the binary compounds brings drastic changes in its structural (amorphous-crystalline), 10 optical (bandgap, refractive index, absorption coefficient, extinction coefficient, optical density, skin depth, dispersion parameters), 11,12 electrical (electrical conductivity, Hall coefficient), 13 thermal (thermal conductivity), electronic (electronic susceptibility,

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Laser induced Te diffusion in amorphous As50Se50 thin films probed by FTIR and XPS

Cited by 11 publications

References 38 publications

Study of Se/Te-doped Cu₂O as a hole transport material in perovskite solar cells

Study of Se/Te-doped Cu₂O as a hole transport material in perovskite solar cells

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications

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Laser induced Te diffusion in amorphous As50Se50 thin films probed by FTIR and XPS

Cited by 11 publications

References 38 publications

Study of Se/Te-doped Cu2O as a hole transport material in perovskite solar cells

Study of Se/Te-doped Cu2O as a hole transport material in perovskite solar cells

Observation of high nonlinearity in Bi doped BixIn35-xSe65 thin films with annealing

Role of Bismuth incorporation on the structural and optical properties in BixIn35‐xSe65 thin films for photonic applications

Contact Info

Product

Resources

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Study of Se/Te-doped Cu₂O as a hole transport material in perovskite solar cells

Study of Se/Te-doped Cu₂O as a hole transport material in perovskite solar cells

Role of Bismuth incorporation on the structural and optical properties in Bi_xIn_35‐xSe₆₅ thin films for photonic applications