Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

Dou, Pengcheng; Gao, Feng; Zhang, Jianmin; Song, Mingying; Zhang, Zhen; Liu, Yunpeng; Shi, Yao

doi:10.1016/j.optcom.2018.02.015

Cited by 2 publications

(1 citation statement)

References 11 publications

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“…The experiments found that excessive power of pulsed lasers leads to a decrease in the peak power of solar cells [1][2][3]. Recently, research has been conducted on the irradiation damage of solar cells using continuous laser [4][5][6][7][8][9] and pulsed laser [10][11][12], accounting for the effects of different wavelengths [13][14][15], employing different pulse widths [16,17], and varying the laser parameters, such as laser fluence and frequency [18][19][20][21][22]. The damage effect of laser irradiation on silicon materials used in solar cells and its mechanism have been the focus of research [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Li,

Huang,

et al. 2024

Electronics

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This experimental study investigates the damage effects of nanosecond pulse laser irradiation on silicon solar cells. It encompasses the analysis of transient pulse signal waveform characteristics at the cells’ output and changes in electrical parameters, such as I–V curves before and after laser irradiation under varying laser fluence and background light intensities, and explores the underlying action mechanisms of laser irradiation. The study reveals that as the laser fluence increases up to 4.0 J/cm2, the peak value of the transient pulse signal increases by 47.5%, while the pulse width augments by 88.2% compared to the initial transient pulse signal. Furthermore, certain parameters, such as open-circuit voltage, short-circuit current, and peak power obtained, from the measured I–V curve indicate a threshold laser fluence for functional degradation of the solar cell at approximately 1.18 ± 0.42 J/cm2. Results obtained from laser irradiation under different background light intensities underscore the significant influence of background light on laser irradiation of silicon cells, with the most severe damage occurring in the absence of light. Moreover, findings from laser irradiation at multiple locations on the silicon cell demonstrate a linear decrease in the output voltage of the silicon cell with an increase in the number of irradiation points.

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Section: Introductionmentioning

confidence: 99%

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Li,

Huang,

et al. 2024

Electronics

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Damage characteristics of continuous-wave laser ablation triple-junction solar cells

Guo

Chang

et al. 2022

Journal of Laser Applications

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The effect of laser irradiation on triple-junction GaAs cells studied via cell irradiation experiments was carried out using a continuous-wave laser with a wavelength of 808 nm. In the experiments, a thermal imaging system was used to measure the surface temperature of the cell, and the surface morphology of the irradiated cell was analyzed. The output performance of the irradiated cell was measured by a source meter, and the results show that the change rate of cell surface temperature increased with increasing laser power density. When the cell damage intensifies, the output characteristics of the cell gradually decay, and the cell loses its photoelectric effect.

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Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

Cited by 2 publications

References 11 publications

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Study on Radiation Damage of Silicon Solar Cell Electrical Parameters by Nanosecond Pulse Laser

Damage characteristics of continuous-wave laser ablation triple-junction solar cells

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