Laser-Induced Fault Simulation

Li, Feng; Natale, Giorgio Di; Flottes, Marie-Lise; Rouzeyre, Bruno

doi:10.1109/dsd.2013.72

Cited by 11 publications

(15 citation statements)

References 12 publications

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“…First, the databases of induced currents is generated using the MUSCA SEP3 tool on every standard cell, then the Calibre tool is used to transfer this information on the netlist of the circuit under evaluation as presented in section 5.1 and 5.2. Developed on the basis of the 0-delay simulator LIFTING [19], tLIFTING (timing LIFTING) [20] is an open-source fault simulator for single/multiple stuck-at faults, single/multiple upsets and single/multiple transients faults. The tool allows 0delay/delay-annotated logic-level simulations and transistor-level fault simulation for digital circuit described in Verilog.…”

Section: Cad Toolsmentioning

confidence: 99%

Laser-induced fault effects in security-dedicated circuits

Leveugle

Maistri

Vanhauwaert

et al. 2014

2014 22nd International Conference on Very Large Scale Integration (VLSI-SoC)

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Section: Cad Toolsmentioning

confidence: 99%

Laser-induced fault effects in security-dedicated circuits

Leveugle

Maistri

Vanhauwaert

et al. 2014

2014 22nd International Conference on Very Large Scale Integration (VLSI-SoC)

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“…The above remark implies that the models [12]- [15] used so far for simulating the effects of laser shots on ICs designed with advanced technologies can lack accuracy. Furthermore, the joint effects of the photoelectric currents and of the related https://doi.org/10.1109/TCAD.2019.2928972 IEEE TCAD: Transactions on Computer-Aided Design of Integrated Circuits and Ssytems IR-drop can only be accurately simulated at low abstraction levels (taking into account the layout topology to better represent the physical phenomenon) in the scope of a whole system.…”

Section: Introductionmentioning

confidence: 99%

“…To the best of our knowledge, among the formerly proposed fault simulators [12], [16]- [20], the most recent one is [21] which is based on open-source code [22]. The major issue with these fault simulators is that they rely on electrical models [13], [15], [23] that are technology dependent.…”

Section: Introductionmentioning

confidence: 99%

Simulation and Experimental Demonstration of the Importance of IR-Drops During Laser Fault Injection

Viera

Maurine

Dutertre

et al. 2020

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Laser fault injections induce transient faults into ICs by locally generating transient currents that temporarily flip the outputs of the illuminated gates. Laser fault injection can be anticipated or studied by using simulation tools at different abstraction levels: physical, electrical or logical. At the electrical level, the classical laser-fault injection model is based on the addition of current sources to the various sensitive nodes of CMOS transistors. However, this model does not take into account the large transient current components also induced between the VDD and GND of ICs designed with advanced CMOS technologies. These short-circuit currents provoke a significant IR-drop that contribute to the fault injection process. This paper describes our research on the assessment of this contribution. It shows through simulation and experiments that during laser fault injection campaigns, laser-induced IR-drop is always present when considering circuits designed with deep submicron technologies. It introduces an enhanced electrical fault model taking the laserinduced IR-drop into account. It also proposes a methodology that allows the use of the model to simulate laser-induced faults at the electrical level in large-scale circuits. On the basis of further simulations and experimental results, we found that, depending on the laser pulse characteristics, the number of injected faults may be underestimated by a factor of up to 2.4 if the laser-induced IR-drop is ignored. This could lead to incorrect estimations of the fault injection threshold, which is especially relevant to the design of countermeasure techniques for secure integrated systems.

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“…This created an urgent need for designing robust circuits against laser fault injection, consequently generating a demand for simulation tools capable of simulating the effects of laser shots on ICs. At electrical-level, a double exponential current source has been demonstrated efficient for modeling at first order a laser shot [3], [4], [5]. These current sources are added to the netlists of cells illuminated by the laser.…”

Section: Introductionmentioning

confidence: 99%

Role of Laser-Induced IR Drops in the Occurrence of Faults: Assessment and Simulation

Viera

Dutertre

Bastos

et al. 2017

2017 Euromicro Conference on Digital System Design (DSD)

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International audienceLaser fault injection attacks induce transient faults into ICs by locally generating transient currents capable of temporarily flipping the outputs of logic gates. Laser fault injection may be anticipated or studied by using simulation tools at different abstraction levels: physical, electrical or logical. At the electrical level, the general laser-fault injection model is based on the addition of current sources to the various sensitive nodes of CMOS transistors. This type of electrical model does not take into account the large transient current components also induced between VDD and GND as a result of laser illumination. Such current components have no direct effect on the logic gate output nodes. Still, they provoke a significant IR-drop that may, in turn, contribute to the fault injection process. This paper describes our research on the assessment of this contribution. It introduces an upgraded electrical model taking the laser-induced IR-drop into account. It also proposes a methodology that allows the model's use to simulate laser-induced faults at electrical level in large-scale circuits. On the basis of simulations with a case-study circuit, we found that, depending on the parameters of the laser pulse, the number of injected faults may be underestimated by a factor as large as 48 if the laser-induced IR-drop is ignored. This may lead to incorrect estimations of the fault injection threshold, which is especially relevant for the design of countermeasure techniques for secure integrated systems

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Laser-Induced Fault Simulation

Cited by 11 publications

References 12 publications

Laser-induced fault effects in security-dedicated circuits

Laser-induced fault effects in security-dedicated circuits

Simulation and Experimental Demonstration of the Importance of IR-Drops During Laser Fault Injection

Role of Laser-Induced IR Drops in the Occurrence of Faults: Assessment and Simulation

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