Laser Induced Effects in the Laser Etched Silicon Nanostructures

Abstract

Laser induced effects are studied in the silicon nanostructures, prepared by laser etching technique, in terms of heating effect and photo-excited Fano effect. Theoretical calculation shows that temperature rise is almost negligible for laser power density of 4.0 kW/cm 2 or less. Raman spectroscopy is employed to study anharmonic effect and electron-phonon (Fano) interaction in the nanostructures of silicon. Photo-excited electrons interact with the Raman active optical phonons before the heating related effects dominate. A combination of Fano and heating effect is observed at high laser power density.

Effect of silicon resistivity on its porosification using metal induced chemical etching: morphology and photoluminescence studies

“…This provides a promising application potential in advanced electronic devices [5], optoelectronic devices [6,7], biological and chemical sensors [8][9][10] etc. Various methods have been reported in literature for synthesis of Si NSs such as ion implantation technique [11][12][13][14], electrochemical etching technique [15][16][17][18] Laser Induced etching technique [19][20][21], metal assisted chemical etching technique or metal induced etching (MIE) technique [22][23][24][25] etc. A particular technique is chosen for fabrication of Si NSs based on suitability, availability and ease as each of these methods has its own advantages and disadvantages.…”