This work describes the application of laser ion source~LIS! for fabrication of semiconductor nanostructures, as well as relevant equipment completed and tested in the IPPLM for the EU STREP "SEMINANO" project and the obtained experimental results. A repetitive pulse laser system of parameters: energy of ;0.8 J in a 3.5 ns-pulse, wavelength of 1.06 mm, repetition rate of up to 10 Hz and intensity on the target of up to 10 11 W0cm 2 , has been employed to produce Ge ions intended for ion implantation into SiO 2 substrate. Simultaneously, laser-ablated material~atoms clusters debris! was deposited on the substrate surface. The parameters of the Ge ion streams~energy and angular distributions, charge states, and ion current densities! were measured with the use of several ion collectors and an electrostatic ion energy analyzer. The SiO 2 films of thickness from 20-400 nm prepared on substrates of a single Si crystal were deposited and implanted with the use of laser-produced germanium of different properties. The modified SiO 2 layers and sample surface properties were characterized with the use of different methods: X-ray photoelectron and Auger electron spectroscopy~XPSϩAES!, Raman scattering spectroscopy~RSS! and scanning electron microscopy~SEM!. The production of the Ge nano-crystallites has been demonstrated for annealed samples prepared in different experimental conditions.