Laser induced direct implantation of ions

Láska, L.; Juha, L.; Krása, J.; Mašek, K.; Pfeifer, M.; Rohlena, K.; Králíková, B.; Skála, J.; Peřina, Vratislav; Hnatowicz, V.; Woryna, E.; Wołowski, J.; Parys, P.; Boody, F.P.; Höpfl, R.; Hora, Heinrich

doi:10.1007/bf03165861

Cited by 18 publications

(14 citation statements)

References 17 publications

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“…49 This strongly affects the peak current detected at some instant irrespective of whether it is charge resolved or not. In many cases, no extraction bias is utilized [50][51][52][53][54][55][56] and electric sectors or energy analyzers are required to charge separate ions of different charge after some initial drift tube length. One issue however common to all systems is the V ext 3/2 dependence alluded to above.…”

Section: Discussionmentioning

confidence: 99%

The DCU laser ion source

Yeates¹,

Costello

Kennedy

2010

Review of Scientific Instruments

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Laser ion sources are used to generate and deliver highly charged ions of various masses and energies. We present details on the design and basic parameters of the DCU laser ion source ͑LIS͒. The theoretical aspects of a high voltage ͑HV͒ linear LIS are presented and the main issues surrounding laser-plasma formation, ion extraction and modeling of beam transport in relation to the operation of a LIS are detailed. A range of laser power densities ͑I ϳ 10 8 -10 11 W cm −2 ͒ and fluences ͑F = 0.1-3.9 kJ cm −2 ͒ from a Q-switched ruby laser ͑full-width half-maximum pulse duration ϳ35 ns, = 694 nm͒ were used to generate a copper plasma. In "basic operating mode," laser generated plasma ions are electrostatically accelerated using a dc HV bias ͑5-18 kV͒. A traditional einzel electrostatic lens system is utilized to transport and collimate the extracted ion beam for detection via a Faraday cup. Peak currents of up to I ϳ 600 A for Cu + to Cu 3+ ions were recorded. The maximum collected charge reached 94 pC ͑Cu 2+ ͒. Hydrodynamic simulations and ion probe diagnostics were used to study the plasma plume within the extraction gap. The system measured performance and electrodynamic simulations indicated that the use of a short field-free ͑L =48 mm͒ region results in rapid expansion of the injected ion beam in the drift tube. This severely limits the efficiency of the electrostatic lens system and consequently the sources performance. Simulations of ion beam dynamics in a "continuous einzel array" were performed and experimentally verified to counter the strong space-charge force present in the ion beam which results from plasma extraction close to the target surface. Ion beam acceleration and injection thus occur at "high pressure." In "enhanced operating mode," peak currents of 3.26 mA ͑Cu 2+ ͒ were recorded. The collected currents of more highly charged ions ͑Cu 4+ -Cu 6+ ͒ increased considerably in this mode of operation.

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Section: Discussionmentioning

confidence: 99%

The DCU laser ion source

Yeates¹,

Costello

Kennedy

2010

Review of Scientific Instruments

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“…The LIS can potentially produce very high ion currents from normally solid materials, with selectable~up to very high! energy and charge states~Boody et al, 1996;Woryna et al, 2000;Láska et al, 2000;Wołowski et al, 2003!. The laser beam has many advantages and applications in terms of deposition and ion implantation of ablated and ionized material~Fernandez et al, Thareja & Sharma, 2006;Trusso et al, 2005;Wieger et al, 2006!. The pulsed laser deposition~PLD!…”

Section: Introductionmentioning

confidence: 99%

Application of pulsed laser deposition and laser-induced ion implantation for formation of semiconductor nano-crystallites

Wołowski¹,

Badziak²,

Czarnecka³

et al. 2007

Laser Part. Beams

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This work describes the application of laser ion source~LIS! for fabrication of semiconductor nanostructures, as well as relevant equipment completed and tested in the IPPLM for the EU STREP "SEMINANO" project and the obtained experimental results. A repetitive pulse laser system of parameters: energy of ;0.8 J in a 3.5 ns-pulse, wavelength of 1.06 mm, repetition rate of up to 10 Hz and intensity on the target of up to 10 11 W0cm 2 , has been employed to produce Ge ions intended for ion implantation into SiO 2 substrate. Simultaneously, laser-ablated material~atoms clusters debris! was deposited on the substrate surface. The parameters of the Ge ion streams~energy and angular distributions, charge states, and ion current densities! were measured with the use of several ion collectors and an electrostatic ion energy analyzer. The SiO 2 films of thickness from 20-400 nm prepared on substrates of a single Si crystal were deposited and implanted with the use of laser-produced germanium of different properties. The modified SiO 2 layers and sample surface properties were characterized with the use of different methods: X-ray photoelectron and Auger electron spectroscopy~XPSϩAES!, Raman scattering spectroscopy~RSS! and scanning electron microscopy~SEM!. The production of the Ge nano-crystallites has been demonstrated for annealed samples prepared in different experimental conditions.

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“…Thick targets have the advantage of being irradiated more times, of using high repetition rate lasers and of producing high ion emission yields to generate currents of the order of Amperes [3]. The fast and intense ion emission process permits the ion implantation into different substrates placed in front of the plasma plume [4]. The ion implantation can be employed as plasma offline diagnostics by controlling the ion depth distribution in different implanted substrates.…”

Section: Introductionmentioning

confidence: 99%